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Group IV Nanocrystals for Silicon Photovoltaics

Published online by Cambridge University Press:  26 January 2011

X. Liu ,
S. Saini ,
M. Vanhoutte ,
J. Bakalis ,
W. Yau ,
A. Eshed ,
L.C. Kimerling ,
N. Pervez ,
I. Kymissis  and
C.W. Wong
X. Liu
Affiliation:
Dept. of Physics, CUNY-Graduate Center, New York, NY, United States Dept. of Physics, CUNY-Queens College, Flushing, NY, United States
S. Saini
Affiliation:
Dept. of Physics, CUNY-Graduate Center, New York, NY, United States Dept. of Physics, CUNY-Queens College, Flushing, NY, United States
M. Vanhoutte
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States
J. Bakalis
Affiliation:
Dept. of Physics, CUNY-Queens College, Flushing, NY, United States
W. Yau
Affiliation:
Dept. of Physics, CUNY-Queens College, Flushing, NY, United States
A. Eshed
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States
L.C. Kimerling
Affiliation:
Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States
N. Pervez
Affiliation:
Depts. of Electrical Engineering & Mechanical Engineering, Columbia University, New York, NY, United States
I. Kymissis
Affiliation:
Depts. of Electrical Engineering & Mechanical Engineering, Columbia University, New York, NY, United States
C.W. Wong
Affiliation:
Depts. of Electrical Engineering & Mechanical Engineering, Columbia University, New York, NY, United States
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Abstract

Silicon nanocrystals (nc-Si), have been shown to act as opto-electronic centers enabling light emission by carrier recombination, when precipitated in a silicon nitride (Si3N4) host. In this work, nc-Si and Germanium nanocrystals (nc-Ge) are studied in sputtered films of Si3N4 and SiGeN for application as tandem cell layers in a Si solar cell. The samples are annealed in a nitrogen gas and forming gas ambient, from 500 ºC to 900 ºC, to investigate the influence of temperature on photoluminescence and photoconductivity.

Keywords

photovoltaicphotoconductivitysputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Nanomaterials Integration for Electronics, Energy and Sensing , 2011 , mrsf10-1305-aa17-27
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Warga, J., Li, R., Basu, S. N. and Dal Negro, L., Appl. Phys. Lett. 93, 151116 (2008).Google Scholar
2. Park, N. M., Choi, C. J., Seong, T. Y., and Park, S. J., Phys. Rev. Lett. 86, 1355 (2001).Google Scholar
3. Saini, S., Sandland, J.G., Eshed, A., Sparacin, D.K., Dal Negro, L., Michel, J. and Kimerling, L.C., “A high index contrast silicon oxynitride materials platform for Er-doped microphotonic amplifiers,” New Materials for Microphotonics (Mater. Res. Soc. Symp. Proc. 817), 27–33 (2004).Google Scholar
4. Dal Negro, L., Yi, J.H., Kimerling, L.C., Hamel, S., Williamson, A. and Galli, G., Appl. Phys. Lett. 88, 183103 (2006).Google Scholar
5. Dal Negro, L., Yi, J.H., Michel, J., Kimerling, L.C., Chang, T.-W.F., Sukhovatkin, V., and Sargent, E.H., Appl. Phys. Lett. 88, 233109 (2006).Google Scholar
6. Taraschi, G., Saini, S., Fan, W.W., Kimerling, L.C. and Fitzgerald, E.A., J. Appl. Phys. 93(12), 9988–9996 (2003).Google Scholar
7. Chew, H. G., Zheng, F., Choi, W.K., Chim, W.K., Foo, Y.L. and Fitzgerald, E.A., Nanotech. 18, 065302 (2007).Google Scholar
8. Presting, H., Konle, J., Kibbel, H. and Banhart, F., Phys. E 14, 249–254 (2002).Google Scholar
9. van der Pauw, L. J., Philips Res. Repts. 13, 1–9 (1958).Google Scholar
10. Yerci, S., Li, R., Kucheyev, S. O., van Buuren, T., Basu, S. N., and Dal Negro, L., Appl. Phys. Lett. 95, 031107 (2009).Google Scholar
11. Sze, S. M., Ng, K. K., Physics Semiconductor Devices, (Wiley-Interscience, John Wiley & Sons Inc.), p. 791.Google Scholar
12. Schroder, D. K., Semiconductor Material And Device Characterization, (Wiley-Interscience, John Wiley &Sons Inc.), p. 34.Google Scholar