Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-28T14:14:48.579Z Has data issue: false hasContentIssue false
  • English
  • Français

The Growth and Characterization of Epitaxial Fluoride Films on Semiconductors

Published online by Cambridge University Press:  22 February 2011

Julia M. Phillips  and
J. M. Gibson
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill., New Jersey 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill., New Jersey 07974
Get access

Abstract

This review considers the growth and characterization of epitaxial alkaline earth fluoride compounds on semiconductors. The field has developed quite rapidly in recent years, from the original demonstration of epitaxial growth in these systems to the investigation of the structure and properties of the layers. Two recent developments are reviewed in detail: the epitaxial relations which have been discovered between fluoride films and semiconductor substrates and the variety of interface structures which these systems display. These findings are beginning to lead to an understanding of the epitaxial growth process in these systems and how it relates to that in other more thoroughly studied systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 381
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Phillips, J. M., Feldman, L. C., Gibson, J. M., and McDonald, M. L., Thin Solid Films 107, 217 (1983).Google Scholar
[2] Phillips, J. M., Feldman, L. C., Gibson, J. M., and McDonald, M. L., J. Vac. Sci. Technol. B1, 246 (1983).CrossRefGoogle Scholar
[3] Tu, C. W., Sheng, T. T., Read, M. H., Schlier, A. R., Johnson, J. G., Johnston, W. D., and Bonnor, W. A., J. Electrochem. Soc. 130, 2081 (1983):Google Scholar
also in Proc. of Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes, ed. Keramides, V. G. and Mahajan, S., p. 165 (Electrochem. Soc., 1983).Google Scholar
[4] Farrow, R. F. C., Sullivan, P. W., Williams, G. M., Jones, G. R., and Cameron, D. C., J. Vac. Sci. Technol. 19, 415 (1981).Google Scholar
[5] Asano, T. and Ishiwara, H., Thin Solid Films 93, 143 (1982).Google Scholar
[6] Ishiwara, H. and Asano, T., Appl. Phys. Lett. 40, 66 (1982).Google Scholar
[7] Ishiwara, H., private communication.Google Scholar
[8] Sullivan, P. W., Cox, T. I., Farrow, R. F. C., Jones, G. R., Gasson, D. B., and Smith, C. S., J. Vac. Sci. Technol. 20, 731 (1982).Google Scholar
[9] Harrison, T. R., Mankiewich, P. M., and Dayem, A. H., Appl. Phys. Lett. 41, 1102 (1982).CrossRefGoogle Scholar
[10] Sullivan, P. W., Farrow, R. F. C., and Jones, G. R., J. Crystal Growth 60, 403 (1982).Google Scholar
[11] Ishiwara, H. and Asano, T., unpublished.Google Scholar
[12] Tu, C. W., Sheng, T. T., Macrander, A. T., Phillips, J. M., and Gruggenheim, H. J., J. Vac. Sci. Technol. A2, (Jan. 1984).Google Scholar
[13] Chernevskaya, E. G. and Anan'eva, G. V., Soviet Phys. Solid State 8, 169 (1966).Google Scholar
[14] Phillips, J. M. and Yashinovitz, C. J., J. Vac. Sci. Technol., in press.Google Scholar
[15] Fontaine, C., Siskos, S., and Munoz-Munoz, A., Abstracts of the 2nd European Workshop on MBE, Sussex University, 27–30 March, 1983.Google Scholar
[16] Asano, T. and Ishiwara, H., Appl. Phys. Lett. 42, 517 (1983).Google Scholar
[17] Sullivan, P. W., Appl. Phys. Lett., in press.Google Scholar
[18] Tung, R. T., Poate, J. M., Bean, J. C., and Jacobson, D. C., Thin Solid Films 93, 77 (1982).Google Scholar
[19] Gibson, J. M. and Phillips, J. M., Appl. Phys. Lett., 43, 828 (1983).Google Scholar
[20] Ishiwara, H., this volume.Google Scholar
[21] Tung, R. T., Gibson, J. M., and Poate, J. M., Phys. Rev. Lett. 50, 429 (1983).Google Scholar