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Growth and Characterization of Lithium Niobate Thin Films on Diamond/Si(100) Substrates

Published online by Cambridge University Press:  10 February 2011

Shunxi Wang ,
Qingxin Su ,
Marc A. Robert  and
Thomas A. Rabson
Shunxi Wang
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
Qingxin Su
Affiliation:
Department of Chemical Engineering, Rice University, Houston, TX 77005
Marc A. Robert
Affiliation:
Department of Chemical Engineering, Rice University, Houston, TX 77005 Rice Quantum Institute, Rice University, Houston, TX 77005
Thomas A. Rabson
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005 Rice Quantum Institute, Rice University, Houston, TX 77005
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Abstract

A low temperature metal-organic decomposition process for depositing LiNbO3 thin films on diamond/Si(100) substrates is reported. X-ray diffraction studies show that the films are highly textured polycrystalline LiNbO3 with a (012) orientation. Scanning electron microscopy analyses reveal that the LiNbO3 thin films have dense, smooth surface without cracks and pores, and adhere very well to the diamond substrates. The grain size in the LiNbO3 thin films is in the range of ∼0.2-0.5 μm. The effect of the processing procedures on the surface morphology of the LiNbO3 films is investigated. Possible reasons for the elimination of microcracks in the LiNbO3 films are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 717
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Rost, Timothy A., Lin, He, and Rabson, Thomas A., Appl. Phys. Lett. 59, 3654 (1991).Google Scholar
2. Lin, Jian, Chen, Jing, Ho, Kuo San, and Rabson, Thomas A., Integrated Ferroelectrics 11, 221 (1995).Google Scholar
3. Huang, Charles H. J., and Rabson, Thomas A., Optics Letters 18, 811 (1993).Google Scholar
4. Ho, Kuo San, Lin, Jian, Chen, Jing, and Rabson, Thomas A., Integrated Ferroelectrics 11, 201 (1995)Google Scholar
5. Wolter, S. D., Stoner, B. R., Glass, J. T., Ellis, P. J., Buhaenko, D. S., Jenkins, C. E., and Southworth, P., Appl. Phys. Lett. 62, 1215 (1993).Google Scholar
6. Stoner, B. R., Sahaida, S. R., Bade, J. P., Southworth, P., and Ellis, P. J., J. Mater. Res. 8, 1334 (1993).Google Scholar
7. Zhu, W., Sivazlian, F. R., Stoner, B. R., and Glass, J. T., J. Mater. Res. 10, 425 (1995).Google Scholar
8. Nakahata, Hideaki, Hachigo, Akihiro, Higaki, Kenjiro, Fujii, Satoshi, Shikata, Shin-ichi, and Fujimori, Naoji, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 42, 362 (1995).Google Scholar
9. Higaki, Kenjiro, Nakahata, Hideaki, Kitabayashi, Hiroyuki, Fujii, Satoshi, Tanabe, Keiichiro, Seki, Yuichiro, and Shikata, Shin-ichi, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 44, 1395 (1997).Google Scholar
10. Rost, Timothy A, Lin, He, Rabson, Thomas A., Baumann, Robert C., and Callahan, Daniel L., J. Appl. Phys. 72, 4336 (1992).Google Scholar
11. Hu, W. S., Liu, Z. G., and Feng, D., J. Appl. Phys. 80, 7089 (1996).Google Scholar
12. Chu, C. J., Pan, C., Margrave, J. L., Hauge, R. H., Diamond and Related Materials 4, 1317 (1995).Google Scholar
13. Tan, S., Gilbert, T., Hung, C.-Y., Schlesinger, T. E., and Migliuolo, M., J. Appl. Phys. 79, 3548 (1996).Google Scholar
14. Glass, Jeffrey T., private communication.Google Scholar