Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-30T22:31:08.643Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of Pb-Based Ferroelectric Oxide Thin Films by Mocvd

Published online by Cambridge University Press:  15 February 2011

Masaru Shimizu  and
Tadashi Shiosaki
Masaru Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology 2167 Shosha, Himeji, Hyogo 671–22, Japan
Tadashi Shiosaki
Affiliation:
Department of Electronics Science and Engineering, Faculty of Engineering, Kyoto University Yoshida Honmach, Sakyo-ku, Kyoto 606, Japan
Get access

Abstract

Using the MOCVD process to produce Pb(Zr, Ti)O3 (PZT) thin films, control of the film stoichiometry and crystalline phase was achieved. The PZT films obtained showed good step coverage, 67%. Uniform PZT and PLZT thin films with a variation of film thickness of less than ±1.5% were successfully obtained on a 6–8 inch silicon wafer. For the evaluation of the crystallinity and epitaxial relationship of the PZT thin films, the total reflection X-ray diffraction (TRXD) method was used for the first time. Using TRXD, the in-plane orientations of PZT and Pt in PZT/Pt/MgO were evaluated. The growth mechanism of PbTiO3 and PZT thin films at the initial growth stage was also investigated using an atomic force microscope (AFM). The switching characteristics of PZT capacitors using Ir and IrO2 electrodes for memory device applications were also investigated and a PZT capacitor with no fatigue up to a switching cycle of 1011 was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 129
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shimizu, M. and Shiosaki, T. in Ferroelectric Thin Films IV, edited by Tuttle, B.A., Desu, S.B., Ramesh, R. and Shiosaki, T. (Mat. Res. Soc. Symp. Proc., 361, Pittsburgh, PA, 1995)pp.295–305.Google Scholar
2. Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Appl. Phys. Lett., 65, 1522 (1994).Google Scholar
3. Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Jpn. J. Appl. Phys., 33, 5211 (1994).Google Scholar
4. Katayama, T., Sugiyama, M., Shimizu, M. and Shiosaki, T., Jpn. J. Appl. Phys., 31, 3005 (1992).Google Scholar
5. Shimizu, M., Fujimoto, M., Katayama, T., Shiosaki, T., Nakaya, K., Fukagawa, M. and Tanikawa, E. in Ferroelectric Thin Films III, edited by Mayer, E.R., Tuttle, B.A., Desu, S.B. and Larsen, P.K. (Mat. Res. Soc. Symp. Proc., 310, Pittsburgh, PA, 1993)pp.255–260.Google Scholar
6. Shiosaki, T., Fujimoto, M., Shimizu, M., Fukagawa, M., Nakaya, K. and Tanikawa, E., Integrated Ferroelectrics, 5, 39 (1994).Google Scholar
7. Shimizu, M., Sugiyama, M., Fujisawa, H. and Shiosaki, T., Integrated Ferroelectrics, 6, 155 (1995).Google Scholar
8. Erbil, A., U.S. Patent No.4882206 (21 November 1989).Google Scholar
9. Horiuchi, T., Fukao, K. and Matsushige, K., Jpn. J. Appl. Phys., 26, L1839 (1987).Google Scholar
10. Hayashi, K., Ishida, K., Horiuchi, T. and Matsushige, K., Jpn. J. Appl. Phys., 31, 4081 (1992).Google Scholar
11. Ishida, K., Hayashi, K., Yoshida, Y., Horiuchi, T. and Matsushige, K., J. Appl. Phys., 73, 7338 (1993).Google Scholar
12. Ishida, K., Horiuchi, T., Kai, S. and Matsushige, K., Jpn. J. Appl. Phys., 34, L240 (1995).Google Scholar
13. Katayama, T., Sugiyama, M., Shimizu, M. and Shiosaki, T. in Proc. 8th IEEE Int. Symp. Applications of Ferroelectrics, edited by Liu, M., Safari, A., Kingon, A. and Haertling, G. (IEEE Service Center, Piscataway, 1993)pp.336–339.Google Scholar
14. Shimizu, M. and Shiosaki, T., J. Korean Phys. Soc., 27, s49 (1994).Google Scholar
15. Shimizu, M., Katayama, T., Sugiyama, M. and Shiosaki, T., Jpn. J. Appl. Phys., 32, 4074 (1993).Google Scholar
16. Shiosaki, T., Kang, C.S., Shimizu, M., Fukagawa, M., Nakaya, K. and Tanikawa, E., Ceramic Transactions, 43, 27 (1994).Google Scholar
17. Shimizu, M., Sugiyama, M., Fujisawa, H., Hamano, T., Shiosaki, T. and Matsushige, K., J. Cryst. Growth, 145, 226 (1994).Google Scholar
18. Shimizu, M., Sugiyama, M., Fujisawa, H. and Shiosaki, T., Jpn. J. Appl. Phys., 33, 5167 (1994).Google Scholar