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Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers

Published online by Cambridge University Press:  01 February 2011

Jonathan Hollander ,
Clifford McAleese ,
Menno Kappers  and
Colin Humphreys
Jonathan Hollander
Affiliation:
jlh72@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom, +44 7816 203930
Clifford McAleese
Affiliation:
cm254@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
Menno Kappers
Affiliation:
mjk30@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
Colin Humphreys
Affiliation:
colin.humphreys@msm.cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
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Abstract

Semi-polar (1122) GaN films were grown on (1100) m-plane sapphire substrates. Growth demonstrated surface striations aligned perpendicular to the in-plane GaN m-axis. SiNx interlayers were incorporated into the as-grown films with the purpose of decreasing the density of defects in the material. Inclusion of interlayers increased the characteristic length of surface striations and feature size. X-ray rocking curves widths are shown to be correlated to specific threading dislocation geometry. Skew-symmetric omega scan peak broadening suggests a decrease in the proportion of screw-type dislocations to edge-type dislocations with increasing number of interlayers.

Keywords

dislocationsx-ray diffraction (XRD)nucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I04-05
Copyright
Copyright © Materials Research Society 2007

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References

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