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Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

Published online by Cambridge University Press:  26 February 2011

K. C. Garrison ,
C. J. Palmstrøm  and
R. A. Bartynski
C. J. Palmstrøm
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
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Abstract

We have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.

For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 613
Copyright
Copyright © Materials Research Society 1989

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References

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