Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-28T21:17:44.614Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of ZnO Thin Film by RF Magnetron Sputtering for Photoacoustic Tomography Sensor

Published online by Cambridge University Press:  15 February 2013

Takuya Matsuo ,
Shuhei Okuda  and
Katsuyoshi Washio
Takuya Matsuo
Affiliation:
Graduate School of Engineering, Tohoku University, Sendai, Miyagi 980-8579, Japan
Shuhei Okuda
Affiliation:
Graduate School of Engineering, Tohoku University, Sendai, Miyagi 980-8579, Japan
Katsuyoshi Washio
Affiliation:
Graduate School of Engineering, Tohoku University, Sendai, Miyagi 980-8579, Japan
Get access

Abstract

To apply thin ZnO film to photoacoustic tomography sensors, we investigated methods to improve its piezoelectricity with high optical transmittance. ZnO film was deposited by RF magnetron sputtering on a quartz substrate with various changes of the following conditions: RF sputtering power, Ar gas pressure, and substrate temperature (TSUB). The preliminary optimization of sputtering conditions is to form the ZnO film with good c-axis crystalline alignment. The results of X-ray diffraction measurement and cross-sectional observations indicated that the high-TSUB condition was preferable. This was because the desorption of Zn due to high-TSUB during the deposition process induced the formation of excellent columnar grains normal to the substrate. To enhance the piezoresponse, the substitution of Zn with different crystal-radius atoms was investigated, the aim being to increase the electrically neutral dipole moment by the partial displacement of the Zn-O bond. The transition metal V, with the potential to have the various configurations and coordination numbers, was selected as the dopant. As a result, it was confirmed that the diffraction peak from the (002) plane shifted to low angles with small degradation of the diffraction intensities.

Keywords

piezoelectricZncrystal growth
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 19 - 24
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Hickernell, F. S., IEEE Trans. Sonics Ultrason. SU-32, 621 (1985).CrossRefGoogle Scholar
Feng, P., Ting, L. J., Chao, Y. Y., Bo, W. X., Fei, Z., Sci. China, Tech. Sci. 55, 2, 421–436 (2012).Google Scholar
Jeong, W. J., Park, G. C., Solar Energy Materials & Solar Cells 65, 37–45 (2001).CrossRefGoogle Scholar
Hickernell, F. S., Proc. IEEE Ultrason. Symp. 785–794 (1980).Google Scholar
Yang, Y. C., Song, C., Wang, X. H., Zeng, F., Pan, F., Appl. Phys. Lett. 92, 012907 (2008).CrossRefGoogle Scholar
Shannon, R. D., Acta Cryst. A32, 751 (1976).CrossRefGoogle Scholar