Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-29T10:47:44.615Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Yi Fu ,
Xianfeng Ni ,
Jingqiao Xie ,
N Biyikli ,
Qian Fan ,
S Chevtchenko ,
Ü Özgür ,
Hadis Morkoç ,
You Ke  and
Robert Devaty
...Show all authors
Yi Fu
Affiliation:
fuy@vcu.edu, Virginia Commonwealth University, Dept of Electrical and Computer Engineering, 601 West Main Street, Richmond, VA, 23284, United States
Xianfeng Ni
Affiliation:
nix@vcu.edu, Virginia Commonwealth University, Richmond, VA, 23284, United States
Jingqiao Xie
Affiliation:
xiej@vcu.edu, Virginia Commonwealth University, Richmond, VA, 23284, United States
N Biyikli
Affiliation:
biyikli@vcu.edu, Virginia Commonwealth University, Richmond, VA, 23284, United States
Qian Fan
Affiliation:
fanq@vcu.edu, Virginia Commonwealth University, Richmond, VA, 23284, United States
S Chevtchenko
Affiliation:
chevtch@vcu.edu, Virginia Commonwealth University, Richmond, VA, 23284, United States
Ü Özgür
Affiliation:
ozgur@vcu.edu, Virginia Commonwealth University, Richmond, VA, 23284, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Richmond, VA, 23284, United States
You Ke
Affiliation:
youke@pitt.edu, University of Pittsburgh, Pittsburgh, PA, 15260, United States
Robert Devaty
Affiliation:
devaty@pitt.edu, University of Pittsburgh, Pittsburgh, PA, 15260, United States
W. J. Choyke
Affiliation:
choyke+@pitt.edu, University of Pittsburgh, Pittsburgh, PA, 15260, United States
C. K. Inoki
Affiliation:
kuan@albany.edu, State University of New York, Albany, NY, 12222, United States
T. S. Kuan
Affiliation:
kuan@albany.edu, State University of New York, Albany, NY, 12222, United States
Get access

Abstract

Growth and polarity control of GaN and AlN on carbon-face SiC (C-SiC) by metalorganic vapor phase epitaxy (MOVPE) are reported. The polarities of GaN and AlN layers were found to be strongly dependent on the pre-growth treatment of C-SiC substrates. A pre-flow of trimethyaluminum (TMAl) or a very low NH3/TMAl ratio results in Al(Ga)-polarity layers on C-SiC. Otherwise, N-polarity layers resulted. The polarities of AlN and GaN layers were conveniently determined by their etching rate in KOH or H3PO4, a method reported earlier. We suggest that the Al adatoms, which have a high sticking coefficient on SiC, form several Al adlayers on C-SiC and change the incorporation sequence of Ga(Al) and N leading to metal polarity surface. In addition, the hexagonal pyramids, typical on N-polarity GaN surface, are absent on N-polarity GaN on off-axis C-SiC owing to high density of terraces on off-axis C-SiC. The properties of GaN layers grown on C-SiC are studied by X-ray diffraction.

Keywords

III-Vthin filmmetalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-37
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Wu, Y., Hanlon, A., Kaeding, J. F., and Sharma, R., Fini, P. T., Nakamura, S., Speak, J. S., Appl. Phys. Lett. 84, 912 (2004).Google Scholar
2 Gao, Yan, Fuji, Tetsuo, Sharma, Rajat, Fujito, Kenji, DenBaars, Steven P., Shuji Nakamura and Evelyn L. Hu, J. J. Appl. Phys. 43, L637 (2004).Google Scholar
3 Schowalter, Leo J., Rojo, J. Carlow, Nikolai Yakolev, Yuriy Shusterman, Katherine Dovidenko, Rungjun Wang, Ishwara Bhat, Glen A. Slack, MRS Internet J. Nitride Semicond. Res. 5S1, W6.7 (2000).Google Scholar
4 Yan, Fawang, Tsukihara, Masashi, Nakamura, Akihiro, Yadani, Takayuki, Tetsuya, , Fukumoto, , Yoshiki, , Sakai, Shiro, Japanese Journal of Applied Physics, Vol. 43, L1057 (2004).Google Scholar
5 Ponce, F. A., Van de Walle, C. G., and Northrup, J. E., Phys. Rev. B, 53, 7473 (1996).Google Scholar