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Growth Kinetics of Molecular Beam Epitaxy on Non-Singular Surfaces

Published online by Cambridge University Press:  25 February 2011

J. F. Egler ,
N. Otsuka  and
K. Mahalingam
J. F. Egler
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
K. Mahalingam
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
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Abstract

Growth kinetics on non-singular surfaces were studied by Monte Carlo simulations. In contrast to the growth on singular and vicinal surfaces, the sticking coefficient on the non-singular surfaces was found to decrease with increase of the surface roughness. Simulations of annealing processes showed that surface diffusion of atoms leads to a stationary surface roughness, which is explained by multiple configurations having the lowest energy in the non-singular surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 295
Copyright
Copyright © Materials Research Society 1993

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References

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