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Growth Mechanism and Structure of Ain Films Grown on Sapphire by MOCVD

Published online by Cambridge University Press:  10 February 2011

Yun-Xin Li ,
L. Salamanca-Riba ,
K. Wongchotigul ,
P. Zhou ,
M. G. Spencer  and
V. K. Jones
Yun-Xin Li
Affiliation:
Materials and Nuclear Engineering, University of Maryland, College Park, MD
L. Salamanca-Riba
Affiliation:
Materials and Nuclear Engineering, University of Maryland, College Park, MD
K. Wongchotigul
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC
P. Zhou
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC
V. K. Jones
Affiliation:
Army Research Laboratory, Adephi, MD
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Abstract

AIN films grown on sapphire by MOCVD with different V/IAR ratios were investigated by XRD, TEM and AFM. The AIN films show single crystalline character as well as columnar structure. The growth of AIN has three zones: (1) high-density nucleation layer (2) fine columnar growth and (3) grain merging and lateral growth. The films grown at intermediate V/III ratio have the maximum value of [0002] FWHM. When the V/HI ratio increases, the thickness of the nucleation zone and the film misorientation increase, but when the ratio is increased further, the nucleation zone decreases and the AIN film has a more highly oriented growth. These results suggest that the AIN films with optimum crystalline quality can be obtained by varying the V/III ratio during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 137
Copyright
Copyright © Materials Research Society 1998

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