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Growth of CdTe Thin Films on Polar and Nonpolar Semiconductor Substrates by Metalorganic Chemical Vapor Deposition.

Published online by Cambridge University Press:  26 February 2011

P. Grodzinski ,
J.H. Mazur ,
A. Nouhi ,
R.J. Stirn  and
R. Sudharsananu
P. Grodzinski
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241
J.H. Mazur
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241
A. Nouhi
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
R.J. Stirn
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
R. Sudharsananu
Affiliation:
Microelectronics Center. School of Electrical Engineering, Georgia Institute of Technology, GA 30332.
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Abstract

Electron diffraction and high resolution electron microscopy (HREM) have been used to investigate the origin of multiple orientation-relationships and defect structure of CdTe thin films grown on (100) GaAs and Si substrates by metal- organic chemical vapor deposition (MOCVD). It has been determined that growth at 370°C with pre-exposure of the GaAs surface to Te following oxide desorption treatment at 600°C resulted in non-parallel epitaxy ((111)CdTe // (100)GaAs), while growth at 300°C following oxide desorption at 500°C with no exposure to Te resulted in parallel epitaxy ((100)CdTe // (100)GaAs). Both epitaxial orientation-relationships were observed on the same substrate for growth at 300°C temperature after 600°C oxide desorption treatment, but with no pre-exposure of the GaAs surface to Te. Preliminary results of growth of CdTe on Si are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 115
Copyright
Copyright © Materials Research Society 1989

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References

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