Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-10T11:35:19.247Z Has data issue: false hasContentIssue false
  • English
  • Français

The Growth of Epitaxial NiSi2 Single Crystals on Silicon by the Use of Template Layers

Published online by Cambridge University Press:  15 February 2011

R. T. Tung ,
J. M. Gibson  and
J. M. Poate
R. T. Tung
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
J. M. Gibson
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
J. M. Poate
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
Get access

Abstract

A novel crystal growth technique for NiSi2 epitaxy is presented which utilizes thin silicide (<60Å) template layers to pin the subsequent growth under ultrahigh vacuum conditions. Single crystalline NiSi2 films can be grown with either type A or type B orientations on Si(111). Continuous single crystalline NiSi2 is grown on Si(100) with flat interface and uniform thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 435
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tu, K. N. and Mayer, J. W., in Thin Films-Interdiffusion and Reactions, edited by Poate, J. M., Tu, K. N., and Mayer, J. W., Wiley, New York, 1978.Google Scholar
[2] Tung, R. T., Bean, J. C., Gibson, J. M., Poate, J. M., and Jacobson, D. C., Appl. Phys. Lett. 40, 684 (1982).Google Scholar
[3] Saitoh, S., Ishiwara, H., Asano, T., and Furukawa, S., Japan. J. Appl. Phys., 20, 1649 (1981).CrossRefGoogle Scholar
[4] Tung, R. T., Poate, J. M., Bean, J. C., Gibson, J. M., and Jacobson, D. C., Thin Solid Films, 93, 77 (1982).Google Scholar
[5] Bean, J. C. and Poate, J. M., Appl. Phys. Lett., 37, 643 (1980).Google Scholar
[6] Saitoh, S., Ishiwara, H., and Furukawa, S., Appl. Phys. Lett., 37, 203 (1980).Google Scholar
[7] Harrison, T. R., private communication, and Bean, J. C. private communication.Google Scholar
[8] Chiu, K. C. R., Poate, J. M., Rowe, J. E., Sheng, T. T., and Cullis, A. G., Appl. Phys. Lett. 38, 988 (1981).Google Scholar
[9] öll, H., Ho, P. S., and Tu, K. N., J. Appl. Phys., 52, 250 (1981).Google Scholar
[10] Tung, R. T., Gibson, J. M., and Poate, J. M., submitted to Phys. Rev. Lett..Google Scholar
[11] Gibson, J. M., Tung, R. T., and Poate, J. M., this volume.Google Scholar
[12] Baglin, J., d'Heurle, F., and Petersson, S., in Thin Film Interfaces and Interactions, edited by Baglin, J. E. E. and Poate, J. M., The Electrochemical Society, Princeton, 1980.Google Scholar
[13] Lau, S.S. and Cheung, N. W., Thin Solid Films, 71, 117 (1980).CrossRefGoogle Scholar