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Growth of GaN without Yellow Luminescence

Published online by Cambridge University Press:  21 February 2011

X. Zhang ,
P. Kung ,
D. Walker ,
A. Saxler  and
M. Razeghi
X. Zhang
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
P. Kung
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
D. Walker
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
A. Saxler
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
M. Razeghi
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
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Abstract

We report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 625
Copyright
Copyright © Materials Research Society 1996

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References

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