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Growth of Halide Scintillators with a Modified Heat Exchange Method

Published online by Cambridge University Press:  21 February 2011

T.G. Berthold  and
B.C. Grabmaier
T.G. Berthold
Affiliation:
Siemens AG, Corporate Research and Development, D-81739 München
B.C. Grabmaier
Affiliation:
Siemens AG, Corporate Research and Development, D-81739 München
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Abstract

To test the potential of the heat exchange method for growing scintillator crystals, ingots of mono-, bi- and trivalent halides were prepared. Except for monovalent halides, the removal of oxygen compounds is indispensable. In the case of CaF2 and BaF2, the purification by reaction with NH4F and a superheating of the melt could be included in the crystal growth process. Clear, monocrystalline ingots of these substances were grown in 4f-heated glassy carbon crucibles without seed crystals. Oxygen-free starting material had to be prepared for the growth of inclusion free CeF3 crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 348 , 1994 , 513
Copyright
Copyright © Materials Research Society 1994

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References

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