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The Growth of Ni Overlayers on Au(100) Buffers Deposited on GaAs(100) and MgO(100) Substrates.

Published online by Cambridge University Press:  21 February 2011

B. Gilles ,
J. Eymery ,
A. Marty ,
J. C. Joud  and
A. Chamberod
B. Gilles
Affiliation:
LTPCM, ENSEEG, 3S402 St. Martin d'Hères, France.
J. Eymery
Affiliation:
CENG, DRFMC, SP2M, MP, 3S041 Grenoble, France.
A. Marty
Affiliation:
CENG, DRFMC, SP2M, MP, 3S041 Grenoble, France.
J. C. Joud
Affiliation:
LTPCM, ENSEEG, 3S402 St. Martin d'Hères, France.
A. Chamberod
Affiliation:
CENG, DRFMC, SP2M, MP, 3S041 Grenoble, France.
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Abstract

High quality single-crystal Au(100) buffers have been grown on GaAs(100) or MgO(100) substrates via a thin bcc Fe(100) nucleation layer. Using RHEED, LEED and Auger spectroscopy the growth of Ni overlayers at room temperature was observed to follow an epitaxial layer-by-layer mode for 2 monolayers, after which islanding occured. Detailed analysis of the Auger signal reveals that atomic mixing appears within the first completed layer. Grazing incidence diffraction has been used to investigate the structure of 5–10 nm films. A mixture of (100) and (110) grains have been characterized; the latter orientation shows a large number of stacking faults along the [111] direction in agreement with the Au[001] direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 511
Copyright
Copyright © Materials Research Society 1992

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References

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