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Growth of Nonpolar (1100) Films and Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Oliver Brandt ,
Yue Jun Sun  and
Klaus H. Ploog
Oliver Brandt
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany
Yue Jun Sun
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany
Klaus H. Ploog
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany
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Abstract

We discuss the growth of M-plane GaN films and (In, Ga)N/GaN multiple quantum well (MQW) structures on LiAlO2(100) substrates by plasma-assisted molecular beam epitaxy. The adsorption and desorption kinetics of Ga on M-plane GaN is studied by reflection high-energy electron diffraction, allowing us to identify the optimum growth conditions with regard to surface morphology. Furthermore, we investigate the compositional profile of M-plane (In, Ga)N/GaN MQWs grown under conditions resulting in comparatively abrupt interfaces. The results demonstrate that significant In surface segregation occurs for the case of M-plane (In, Ga)N. The dependence of the transition energies of the M-plane MQWs on the actual well thickness reveals, however, that the structures are indeed free of electrostatic fields along the growth direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E2.1
Copyright
Copyright © Materials Research Society 2005

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