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Growth of Patterned SiC by Ion Modification and Annealing of C60 Films on Silicon

Published online by Cambridge University Press:  03 September 2012

L. Moro ,
A. Paul ,
D. C. Lorents ,
R. Malhotra ,
K. J. Wu  and
S. Subramoney
L. Moro
Affiliation:
SRI International, 333 Ravenswood Avenue, Menlo Park, CA 94025
A. Paul
Affiliation:
SRI International, 333 Ravenswood Avenue, Menlo Park, CA 94025
D. C. Lorents
Affiliation:
SRI International, 333 Ravenswood Avenue, Menlo Park, CA 94025
R. Malhotra
Affiliation:
SRI International, 333 Ravenswood Avenue, Menlo Park, CA 94025
K. J. Wu
Affiliation:
Charles Evans & Associates, 301 Chesapeake Drive, Redwood City, CA 94063
S. Subramoney
Affiliation:
DuPont Company, Route 141-Henry Clay, Wilmington, DE 19880-0228
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Abstract

Irradiation of vapor-deposited C60 films with a KeV ion beam (Ar+ or Ga+) transforms the surface layer of C60 into a non-volatile carbon film. During the subsequent annealing at 900°C, the modified C60 layer confines the underlying C60 on the silicon surface, allowing the formation of SiC. With this method, patterned SiC structures on silicon with the high lateral resolution possible with ion beams are fabricated

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 259
Copyright
Copyright © Materials Research Society 1997

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