Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-30T20:48:22.739Z Has data issue: false hasContentIssue false
  • English
  • Français

Guided Self Assembly of InAs Quantum Dots on a Cleaved Facet

Published online by Cambridge University Press:  01 February 2011

Emanuele Uccelli ,
Dieter Schuh ,
Jochen Bauer ,
Max Bichler ,
Jonathan J. Finley ,
Matthew Grayson ,
Gerhard Abstreiter  and
Anna Fontcuberta i Morral
Emanuele Uccelli
Affiliation:
emanuele.uccelli@wsi.tum.de, Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany, +49 89 289 12756, +49 89 320 6620
Dieter Schuh
Affiliation:
dieter.schuh@physik.uni-regensburg.de, Universität Regensburg, Institut für Angewandte und Experimentelle Physik II, Regensburg, 93040, Germany
Jochen Bauer
Affiliation:
jochen.bauer@wsi.tum.de, Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Max Bichler
Affiliation:
bichler@wsi.tum.de, Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Jonathan J. Finley
Affiliation:
jonathan.finley@wsi.tum.de, Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Matthew Grayson
Affiliation:
matthew.grayson@wsi.tum.de, Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Gerhard Abstreiter
Affiliation:
gerhard.abstreiter@wsi.tum.de, Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Anna Fontcuberta i Morral
Affiliation:
annafm@wsi.tum.de, Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, Garching, 85748, Germany
Get access

Abstract

The long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.

Keywords

molecular beam epitaxy (MBE)III-Vself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M16-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bimberg, D., Grundmann, M. and Ledentsov, N.N., Quantum Dot Heterostructures, (John Wiley and Sons, Chichester, 1999).Google Scholar
2. Nötzel, R. and Ploog, K.H., J. Cryst. Growth 227–228, 8 (2001).Google Scholar
3. Kim, H.J., Park, Y.J., Park, Y.M., Kim, E.K. and Kim, T.W., Appl. Phys. Lett. 78, 3253 (2001).Google Scholar
4. Leon, R., Chaparro, S., Johnson, S.R., Navarro, C., Jin, X., Zhang, Y.H., Siegert, J., Marcinkevicius, S., Liao, X.Z. and Zou, J., J. Appl. Phys. 91, 5826 (2002).Google Scholar
5. Bhat, R., Kapon, E., Hwang, D.M., Koza, M.A. and Yun, C.P., J. Cryst. Growth 93, 850 (1988).Google Scholar
6. Gerardot, B.D., Subramanian, G., Minvielle, S., Lee, H., Johnson, J.A., Schoenfeld, W.V., Pine, D., Speck, J.S. and Petroff, P.M., J. Cryst. Growth 236, 647 (2002).Google Scholar
7. Songmuang, R., Kiravittaya, S. and Schmidt, O.G., Appl. Phys. Lett. 82, 2892 (2003).Google Scholar
8. Bauer, J., Schuh, D., Uccelli, E., Schulz, R., Kress, A., Hofbauer, F., Finley, J.J. and Abstreiter, G., Appl. Phys. Lett. 85, 4750 (2004).Google Scholar
9. Pfeiffer, L.. West, K.W., Stormer, H.L., Eisenstein, J.P., Baldwin, K.W., Gershoni, D. and Spector, J., Appl. Phys. Lett. 56, 1697 (1990).Google Scholar
10. Shchukin, V.A., Ledentsov, N.N. and Bimberg, D., Epitaxy of Nanostructures, (Springer-Verlag, Berlin, 2004).Google Scholar
11. Ballet, P., Smathers, J.B., Yang, H., Workman, C.L. and Salamo, G.J., J. Appl. Phys. Lett 90, 481 (2001).Google Scholar
12. Wasserman, D., Lyon, S.A., Hadjipanayi, M., Maciel, A. and Ryan, J.F., Appl. Phys. Lett. 83, 5050 (2003).Google Scholar
13. Lobo, C. and Leon, R., J. Appl. Phys. 83, 4168 (1998).Google Scholar