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H NMR Evidence for a Change in The Local Hydrogen Environment of Sites Associated with the Staebler-Wronski Effect in a-Si:H

Published online by Cambridge University Press:  01 February 2011

T. Su ,
Robin Plachy ,
P. C. Taylor ,
S. Stone ,
G. Ganguly  and
D. E. Carlson
T. Su
Affiliation:
Department of Physics, University of Utah Salt Lake City, UT 84112, U.S.A.
Robin Plachy
Affiliation:
Department of Physics, University of Utah Salt Lake City, UT 84112, U.S.A.
P. C. Taylor
Affiliation:
Department of Physics, University of Utah Salt Lake City, UT 84112, U.S.A.
S. Stone
Affiliation:
BP Solar Toano, VA 23168, U.S.A.
G. Ganguly
Affiliation:
BP Solar Toano, VA 23168, U.S.A.
D. E. Carlson
Affiliation:
BP Solar Toano, VA 23168, U.S.A.
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Abstract

We study the H NMR line shapes of a sample of a-Si:H under several conditions: 1) as grown, 2) light-soaked for 600 hours, and 3) light-soaked followed by annealing at different temperatures. At T = 7 K, the NMR line shape of the sample after light soaking exhibits an additional doublet compared to that of the sample as-grown. This doublet is an indication of a closely separated hydrogen pair. The distance between the two hydrogen atoms is estimated to be about (2.3 ± 0.2) Å. The concentration of these hydrogen sites is estimated to be between 1017 and 1018 cm-3 consistent with ESR measurements of the defect density after light soaking. This doublet disappears after the sample is annealed at 200°C for 4 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A11.2
Copyright
Copyright © Materials Research Society 2002

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References

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