Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-28T21:01:42.306Z Has data issue: false hasContentIssue false
  • English
  • Français

Hafnia surface and high-k gate stacks

Published online by Cambridge University Press:  31 January 2011

Xuhui Luo ,
Alex Demkov ,
Onise Sharia  and
Gennadi Bersuker
Xuhui Luo
Affiliation:
luoxuhui@physics.utexas.eduxuhuiluo@gmail.com, UT Austin, Austin, Texas, United States
Alex Demkov
Affiliation:
Demkov@scholarone.com, UT Austin, Austin, Texas, United States
Onise Sharia
Affiliation:
osharia@umd.edu, UT Austin, Austin, Texas, United States
Gennadi Bersuker
Affiliation:
Gennadi.Bersuker@SEMATECH.Org, SEMATECH, Austin, Texas, United States
Get access

Abstract

Hafnium dioxide that belongs to a class of metal oxides with a high dielectric constant or high-k dielectrics has been recently introduced as a gate dielectric in field effect transistors. We report a theoretical study of structural and electronic properties of hafnia surface, and the electronic structure and band alignment at hafnia interfaces with metals, oxides and semiconductors that are crucial in gate stack engineering.

Keywords

dielectricelectronic structuresimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C11-02
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Wilk, G.D., Wallace, R.M., and Anthony, J.M., J. Appl. Phys., 89, 5243 (2001).Google Scholar
22007 International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose (2007).Google Scholar
3 Copel, M., Gribelyuk, M., and Gusev, E., Appl. Phys. Lett. 76, 436 (2000).Google Scholar
4 Gutowski, M., Jaffe, J. E., Liu, C., Stoker, M., Hegde, R. I., Rai, R.S. and Tobin, P. J., Appl. Phys. Lett., 80, 1897, (2002).Google Scholar
5 Zhao, X. and Vanderbilt, D., Phys. Rev. B 65, 233106 (2002).Google Scholar
6 Lysaght, P., Woicik, J.C., Lee, B.H., Jammy, R., Appl. Phys. Lett. 91, 122910, (2007).Google Scholar
7 Ho, M. Y., Gong, H., Wilk, G. D., Busch, B. W., Green, M. L., Muller, D. A., Bude, M., Lin, W. H., M. E.Loomans, Lahiri, S. K., and Räisänen, P. T., J. Appl. Phys. 93, 1477 (2003).Google Scholar
8 Triyoso, D., Liu, R., Roan, D., Ramon, M., Edwards, N. V., Gregory, R., Werho, D., Kulik, J., Tam, G., Irwin, E., Wang, X. D., La, L. B., Hobbs, C., Garcia, R., Baker, J., White, B. E., and Tobin, P., J. Electrochem. Soc. 151, 220 (2004).Google Scholar
9 Aarik, J., Aidla, A., Sammelselg, V., and Uustare, T., J. Cryst. Growth 220, 105 (2000).Google Scholar
10 Iskandarova, I.M., Knizhnik, A.A., Rykova, E.A., Bagatur'yants, A.A., Potaptkin, B.V., and Korkin, A.A., Microelectronic Eng. 69, 587 (2003).Google Scholar
11 Mukhopadhyay, A.B., Sanz, J.F., and Musgrave, C.B., Phys. Rev. B 73, 115330 (2006).Google Scholar
12 Luo, X., Demkov, A.A., Triyoso, D., Fejes, P., Gregory, R., and Zollner, S., Phys. Rev. B 78, 245314 (2008).Google Scholar
13 Sharia, O., Demkov, A.A., Bersuker, G., and Lee, B.H., Phys. Rev. B 75, 035306 (2007).Google Scholar
14 Bersch, E., Rangan, S., Bartynsky, R.A., Gaefunkel, E., and Vescovo, E., Phys. Rev. B 78, 085114 (2008).Google Scholar
15 Kresse, G. and Furthmuller, J., Phys. Rev. B 54, 11169 (1996).Google Scholar
16 Ceperley, D. M. and Alder, B. J., Phys. Rev. Lett. 45, 566 (1980).Google Scholar
17 Perdew, J. P. and Zunger, A., Phys. Rev. B 23, 5048, (1981).Google Scholar
18 Blöchl, P. E., Phys. Rev. B 50, 17 953 (1994).Google Scholar
19 Vanderbilt, D., Phys. Rev. B 41, 7892 (1990).Google Scholar
20 Monkhorst, H. J. and Pack, J. D., Phys. Rev. B 13, 5188 (1976).Google Scholar
21 Hedin, L.,Phys. Rev. 139, A796 (1965).Google Scholar
22 Sharia, O., private communication.Google Scholar
23 Sayan, S., Emge, T., Garfunkel, E., Zhao, X., Wielunski, L., Bartynski, R.A., Vanderbilt, D., Suehle, J.S., Suzer, S., and Banszak-Holl, M., J. Appl. Phys. 96, 7485 (2004).Google Scholar
24 Smoluchowsky, R., Phys. Rev. 60, 661 (1941).Google Scholar
25 Rignanese, G.-M., Gonze, X., Cho, K., Pasquarello, A., Phys. Rev. B 69. 184301 (2004)Google Scholar
26 Gonze, X., Allan, D.C. and Teter, M.P., Phys. Rev. Lett. 68, 3603 (1992).Google Scholar
27 Sharia, O., Demkov, A.A., Bersuker, G., and Lee, B.H., Phys. Rev. B 77, 085326 (2008).Google Scholar