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Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-doped SiC

Published online by Cambridge University Press:  11 February 2011

Gerhard Pensl ,
Florin Ciobanu ,
Michael Krieger ,
Michael Laube ,
Sergey Reshanov ,
Frank Schmid ,
Günter Wagner ,
Hiroyuki Nagasawa  and
Adolf Schöner
Gerhard Pensl
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Florin Ciobanu
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Michael Krieger
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Michael Laube
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Sergey Reshanov
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Frank Schmid
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstraβe 7, DE-91058 Erlangen, Germany
Günter Wagner
Affiliation:
Institute of Crystal Growth, Max-Born-Straβe 2, DE-12489 Berlin, Germany
Hiroyuki Nagasawa
Affiliation:
Hoya Advanced Semiconductor Technologies Co. Ltd., 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
Adolf Schöner
Affiliation:
ACREO AB, Electrum 236, Isafjordsgatan 22, SE-164 40 Kista-Stockholm, Sweden
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Abstract

The Hall scattering factor of holes rH,h(T) in 4H- and 6H-SiC is determined by comparing the temperature-dependent free hole concentration p(1/T) obtained from Hall effect and from the neutrality equation with defect parameters, which are independently determined by SIMS and C-V measurements. rH,h(T) strongly deviates from 1 and assumes values between 1.4 and 0.5 at temperatures ranging from 100K to 800K. rH,h(T) is identical for 4H-and 6H-SiC within the measurement uncertainty. Al-doped SiC epilayers of the 3C-, 4H- and 6H-polytype were investigated with admittance spectroscopy and DLTS prior to and subsequent to processing steps. Depending on the SiC polytype, a different number of shallow acceptors is observed, which are thermally stable up to high temperatures (1700°C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K3.2
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Dang, Le Si, Lee, K. M., Watkins, G. D., Choyke, W. J., Phys. Rev. Lett. 45, 390 (1980).Google Scholar
2. Troffer, T., Schadt, M., Frank, T., Itoh, H., Pensl, G., Heindl, J., Strunk, H. P., Maier, M., phys. stat. sol. (a) 162, 277 (1997).Google Scholar
3. van der Pauw, L. J., Philips Res. Repts 13, 1 (1958).Google Scholar
4. Wellenhofer, G., Rössler, U., phys. stat. sol. (b) 202, 107 (1997).Google Scholar
5. Vodakov, Yu. A., Mokhov, E. N. in: Silicon Carbide, 1973, Marshall, R. C., Faust, J. W. Jr, Ryan, C. E. (eds.), Columbia, University of South Carolina Press 1974, p. 508.Google Scholar
6. Schöner, A., Nordell, N., Rottner, K., Helbig, R., Pensl, G., Inst. Phys. Conf. Ser. No. 142, 493 (1996)Google Scholar
7. Schadt, M., Dissertation, Erlangen, 1997.Google Scholar
8. Nagasawa, H., Kawahara, T., Yagi, K., Mater. Sci. Forum 389–393, 319 (2002).Google Scholar
9. Szmulowicz, F., Phys. Rev. B 28, 5943 (1983).Google Scholar
10. Reshanov, S. A., Klettke, O., Pensl, G., Mater. Sci. Forum, to be published (2003).Google Scholar
11. Deák, P., Aradi, B., Gali, A., Gerstmann, U., Choyke, W. J., Mater. Sci. Forum, to be published (2003).Google Scholar
12. Pensl, G., Schmid, F., Ciobanu, F., Laube, M., Reshanov, S. A., Schulze, N., Semmelroth, K., Nagasawa, H., Schöner, A., Wagner, G., Mater. Sci. Forum, to be published (2003).Google Scholar
13. Klettke, O., Reshanov, S. A., Pensl, G., Sishkin, Y., Devaty, R. D., Choyke, W. J., Physica B 308–310, 687 (2001).Google Scholar