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Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

Published online by Cambridge University Press:  10 February 2011

C. E. Nebel ,
M. Rother ,
C. Summonte ,
M. Heintze  and
M. Stutzmann
C. E. Nebel
Affiliation:
Walter Schottky Institut, TU München, 85748 Garching, Germany, CNebel@physik.tu-muenchen.de
M. Rother
Affiliation:
Walter Schottky Institut, TU München, 85748 Garching, Germany, CNebel@physik.tu-muenchen.de
C. Summonte
Affiliation:
CNR Ist. LAMEL, 40129 Bologna, Italy, Summonte@area.bo.cnr.it
M. Heintze
Affiliation:
Institut für Physikalische Elektronik, Universitäit Stuttgart, 70569 Stuttgart, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institut, TU München, 85748 Garching, Germany, CNebel@physik.tu-muenchen.de
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Abstract

Hall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 813
Copyright
Copyright © Materials Research Society 1996

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