Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-30T22:03:05.576Z Has data issue: false hasContentIssue false
  • English
  • Français

Harvesting Betavoltaic and Photovoltaic Energy with Three Dimensional Porous Silicon Diodes

Published online by Cambridge University Press:  01 February 2011

Wei Sun ,
Nazir P. Kherani ,
Karl D. Hirschman ,
Larry L. Gadeken  and
Philippe M. Fauchet
Wei Sun
Affiliation:
Department of Biomedical Engineering, University of Rochester, Rochester, New York 14627, USA
Nazir P. Kherani
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Karl D. Hirschman
Affiliation:
Microelectronic Engineering Department, Rochester Institute of Technology, Rochester, New York 14623, USA
Larry L. Gadeken
Affiliation:
BetaBatt, Inc., 12819 Westleigh Drive, Houston, Texas 77077, USA
Philippe M. Fauchet
Affiliation:
Department of Biomedical Engineering, University of Rochester, Rochester, New York 14627, USA Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA
Get access

Abstract

Conventional two-dimensional p-n diodes can be used for betavoltaic and photovoltaic energy conversion, but the device efficiency is limited by the planar geometry. We propose and demonstrate a novel three-dimensional diode geometry based on porous silicon. The 3D pore array provides two very important features: (1) the storage of the radioisotope energy source and (2) its extreme proximity to the p-n junction on each pore wall. The particle energy losses are thereby minimized prior to entering the conversion layer. In betavoltaics, our 3D betavoltaic device efficiency is 10 times that of a similar planar device. In photovoltaics, photons play the role of beta particles and photon trapping inside the pores enhances the conversion efficiency. Further fabrication and geometry optimization can result in practical, high performance devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L8.3
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rappaport, P., Phys. Rev. 93, 246 (1954).Google Scholar
2. Kosteski, T.. Kherani, N. P., Shmayda, W. T., Costea, S., and Zukotynski, S., IEE Proc. – Circuits Devices Syst., 150, 274 (2003).Google Scholar
3. Bower, K.E., Barbanel, Y.A., Shreter, Y.G., Bohnert, G.W., ed., Polymers, Phosphors, and Voltaic for Radioisotope Microbatteries (CRC Press, 2002).Google Scholar
4. Lal, A., Bilbao, R. M., León, Y, Guo, H., Li, H., Santanam, S., Yao, R., Blanchard, J., and Henderson, D., A nuclear microbattery for MEMS devices (Proc. 9th International Conference on Nuclear Engineering, Nice, 2001).Google Scholar
5. Canham, L., ed., Properties of porous silicon, (IEE/INSEPC, 1997).Google Scholar
6. Bisi, O., Ossicini, S., Pavesi, L., Surf. Sci. Rep. 38, 1 (2000).Google Scholar
7. Lehmann, V., Ronnebeck, S., J. Electrochem. Soc. 146, 2968 (1999).Google Scholar
8. Christophersen, M., Carstensen, J., Feuerhake, A., Foll, H., Mat. Sci. Eng. B 2000, 69–70, 194.Google Scholar
9. Hirschman, K. D., Tsybeskov, L., Duttagupta, S. P., Fauchet, P. M., Nature 384, 338 (1996).Google Scholar
10. Striemer, C. C., Fauchet, P. M., Appl. Phys. Lett. 81, 2980 (2002).Google Scholar
11. Sze, S. M., Physics of Semiconductor Devices (Wiley, ed. 2, 1981).Google Scholar