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Heavy Metal Gettering in Implanted Buried-Oxide Structures

Published online by Cambridge University Press:  28 February 2011

T. I. Kamins  and
S. Y. Chiang
T. I. Kamins
Affiliation:
Hewlett-Packard Laboratories, Palo Alto CA 94304
S. Y. Chiang
Affiliation:
Hewlett-Packard Laboratories, Palo Alto CA 94304
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Abstract

To investigate gettering of heavy metal impurities to the damaged regions surrounding an implanted buried oxide, the behavior of chrominum and copper on annealing has been investigated. Cr tends to segregate to the surface Si-SiO2 interface, although a small fraction moves to the damaged regions surrounding the buried oxide. Cu segregates to the damaged regions more readily; in addition, a large fraction of the implanted Cu moves to a location several micrometers beneath the buried oxide layer. The buried oxide does not appear to stop the movement of the Cu.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 239
Copyright
Copyright © Materials Research Society 1986

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References

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