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Hetroepitaxy of GaAs by MBE on High Temperature Hydrogen Annealed Nominally (100) Oriented Silicon

Published online by Cambridge University Press:  26 February 2011

T. P. Humphreys ,
K. das ,
J. B. Posthill ,
N. Parikh ,
J. Tarn ,
N. EL-Masry ,
S. M. Bedair ,
W. K. Chu  and
J. J. Wortman
T. P. Humphreys
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–7911
K. das
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
J. B. Posthill
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
N. Parikh
Affiliation:
Department of Physics and Astronmy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27514
J. Tarn
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
N. EL-Masry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
S. M. Bedair
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–7911
W. K. Chu
Affiliation:
Department of Physics and Astronmy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27514
J. J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–7911
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Abstract

High-quality GaAs epitaxial layers have been grown by molecular beam epitaxy on nominally (100) oriented silicon substrates annealed in a hydrogen-ambient at 1250 ? C. Growth procedure involves an in-situ thermal annealing step after the initial deposition of a thin GaAs buffer layer. Rutherford backscattering and channeling of 2.1 MeV He+ ions, interference optical and transmission electron microscopy have been used to characterize these layers. Comparative studies indicate that the epitaxial layers grown on hydrogen-ambient annealed substrates have a superior surface morphology and a lower interface disorder than those on chemically cleaned silicon (100) substrates. Microtwins, dislocations and antiphase domain boundaries are the predominant defects observed in these layers. A lower incidence of microtwins were observed in the hydrogen annealed substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 443
Copyright
Copyright © Materials Research Society 1988

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References

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