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Hexagonal Pyramids Shaped GaN Light Emitting Diodes Array by N-polar Wet Etching

Published online by Cambridge University Press:  15 May 2013

Jun Ma ,
Liancheng Wang ,
Zhiqiang Liu ,
Guodong Yuan ,
Xiaoli Ji ,
Ping Ma ,
Junxi Wang ,
Xiaoyan Yi ,
Guohong Wang  and
Jinmin Li
Jun Ma*
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Liancheng Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Zhiqiang Liu
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Guodong Yuan
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Xiaoli Ji
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Ping Ma*
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Junxi Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Xiaoyan Yi
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Guohong Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Jinmin Li
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
*
*Email: majun@semi.ac.cn
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Abstract

In this work, we investigated the influence of N-polar wet etching on the properties of nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs). The cathodeluminescence images showed the randomly distribution of hexagonal pyramids with isolated active regions. The transmission electron microscopy images demonstrated the reduced density of threading dislocations. The IQE was estimated by temperature dependence of photoluminescence, which showed 30% increase for HPA V-LEDs compared with broad area (BA) V-LEDs. The improved extraction efficiency was verified by finite difference time domain simulation, which was 20% higher than that of roughened BA V-LEDs. The electrical properties of HPA V-LEDs were measured by conductive atomic force microscopy (CAFM) measurements. HPA V-LEDs exhibited much lower leakage current due to the improved crystal quality.

Keywords

nitridedevicesmicrostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 353 - 359
Copyright
Copyright © Materials Research Society 2013 

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