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HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition

Published online by Cambridge University Press:  01 February 2011

Pang Shiu Chen ,
Heng-Yuan Lee ,
Ching-Chiun Wang ,
Ming-Jinn Tsai  and
Kou-Chen Liu
Pang Shiu Chen
Affiliation:
pschen@must.edu.tw, MingShin University of Science and Technology, Materials Science and Engineering, 1 Hsin-Hsing Road, HSIN-FONG ,, HSIN-CHU, 30401, Taiwan, 886-3-5593142 ext 3377, 886-3-5593142 ext 3377
Heng-Yuan Lee
Affiliation:
hengyuan@itri.org.tw, Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute,, Chutung,, HsinChu, 304, Taiwan
Ching-Chiun Wang
Affiliation:
juin0306@itri.org.tw, Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute,, Chutung, Hsinchu, 304, Taiwan
Ming-Jinn Tsai
Affiliation:
mjtsai@itri.org.tw, Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute,, Chutung, Hsinchu, 304, Taiwan
Kou-Chen Liu
Affiliation:
Jacobliu@mail.cgu.edu.tw, Chang Gung University, Department of Electronic Engineering, Tao-Yuan, 333, Taiwan
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Abstract

The materials properties and resistance switching characteristics of hafnium oxide-based binary oxide were investigated for next generation memory device application. A nonstoichometric hafnium oxide (HfOx) film with a mixture structure of monoclinic and tetragonal phase and some metallic Hf-Hf bonds on TiN/Si were prepared by atomic layer chemical vapor deposition (ALCVD). Resistance random access memory devices consisting of Pt/HfOx/TiN/Si with low power operation (< 0.4 mW) and reset current (< 100 mA) were fabricated. The resistance ratio of high resistance state to low resistance state maintains 100∼1000 and after 1000 cycles of repetitively switching. A 1-nm-thick Al2O3 film in the interface between top electrode and HfOx films, the Pt/Al2O3/HfOx/TiN/Si memory devices were found that soft-error of set and reset process often occurred. Interface states in the anode side play an important role in maintaining a stable resistive switching for HfOx-based memory devices.

Keywords

atomic layer depositionmemoryfilamentary
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-04
Copyright
Copyright © Materials Research Society 2007

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