Hostname: page-component-6bf8c574d5-gr6zb Total loading time: 0 Render date: 2025-02-22T20:31:55.273Z Has data issue: false hasContentIssue false
  • English
  • Français

High and Low Temperature Measurements of the Chromium Diffusivity in Silicon

Published online by Cambridge University Press:  25 February 2011

J. Zhu  and
D. Barbier
J. Zhu
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein, F69621, Villeurbanne cedex, FRANCE
D. Barbier
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein, F69621, Villeurbanne cedex, FRANCE
Get access

Abstract

By grouping high and low temperature diffusivity measurements in boron-doped silicon, a new diffusivity law for chromium in the 20–1050 °C temperature range has been established. High temperature diffusivities were deduced from erfc fits of chromium-boron pair profiles measured by means of Deep Level Transient Spectroscopy in chromium-plated substrates, after annealing for a short time in a lamp furnace. Low temperature diffusivities were derived from the association time constants of the chromium-boron pairing reaction in chromium-contaminated specimens. The whole data points were well fitted using the following expression for the diffusion coefficient: D= 2.6×10-3 exp(-0.81 ± 0.02 eV/kT). Because of the wide 1/T interval available, the migration enthalpy value is more accurate than the previous determinations using only high temperature diffusivity results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 567
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Weber, E. R., Appl. Phys. A, 30, 1–22 (1983).Google Scholar
2 Weber, E.R. and Wiehl, N. in Defects in Semiconductors II. edited by Mahajan, S. and Corbet, J.W. (Mater, res. Soc. proc. 14, North Holland, New york, 1983) pp 19–32.Google Scholar
3 Gilles, D., Bergholz, W. and Schröter, W., J. Appl. Phys. 59 (10), 3590 (1986).Google Scholar
4 Utzig, J. and Gilles, D. in Defects in Semiconductors 15. edited by Ferenczi, G. (Materials Science Forum, 38–41. Trans. Tech. Publications, Aldermannsdorf, Switzerland, 1989) p. 729.Google Scholar
5 Hocine, S. and Mathiot, D., Appl. Phys. Lett., 53, 1269 (1988).Google Scholar
6 Bendik, N.T., Garnyk, V.S. and Milevskii, L.S., Soviet Physics-Solid State, 12 (1), 150 (1970).Google Scholar
7 Würker, W., Roy, K. and Hesse, J., Mat. Res. Bull., 9, 971 (1974).Google Scholar
8 Woodbury, H.H. and Ludwig, G.W., Phys. Rev., 117. 102 (1960).Google Scholar
9 Graff, K. and Pieper, H. in Semiconductor Silicon, edited by Huff, H.R., Kriegler, R.J., and Takeishi, Y. (The Electrochemical Society, Pennington, 1981) p. 331.Google Scholar
10 Conzelmann, H., Graff, K. and Weber, E.R., Appl. Phys. A, 30, 169 (1983).Google Scholar
11 Reiss, H.,Fuller, C.S. and Morin, F.J. in Chemical Interactions among Defects in Germanium and Silicon. Bell Syst. Tech. J., 35 pp. 535–635 (1956).Google Scholar
12 Utzig, J., J. Appl. Phys., 65 (10), 3868 (1989).Google Scholar