Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-13T02:28:09.644Z Has data issue: false hasContentIssue false
  • English
  • Français

High Damage Threshold Optical Films for Excimer Lasers

Published online by Cambridge University Press:  25 February 2011

H. Ito ,
N. Kajita ,
Y. Minowa ,
H. Yoshida  and
T. Ina
H. Ito
Affiliation:
Mitsubishi Electric Corporation, Itami Works, Amagasaki, Hyogo, 661, Japan
N. Kajita
Affiliation:
Mitsubishi Electric Corporation, Itami Works, Amagasaki, Hyogo, 661, Japan
Y. Minowa
Affiliation:
Mitsubishi Electric Corporation, Itami Works, Amagasaki, Hyogo, 661, Japan
H. Yoshida
Affiliation:
Mitsubishi Electric Corporation, Itami Works, Amagasaki, Hyogo, 661, Japan
T. Ina
Affiliation:
Mitsubishi Electric Corporation, Itami Works, Amagasaki, Hyogo, 661, Japan
Get access

Abstract

High damage threshold coating for high energy KrF excimer laser has been developed by the multiple ion beam deposition system, which contains a couple of the ionized cluster beam (ICB) sources and the ionized gas beam source. The damage threshold of low refractive SiO2, high refractive A12O3 and SiO2/A12O3 multilayer coatings is found to be more than 105 shots at 8J/cm2 laser energy. Oxidation is enhanced by ion bombardment during the film growth.

The refractive indices of SiO2 and A1203 films were 1.46 and 1.62 at the ion current density of 0.8μA/cm2. The film density of SiOx approaches to the bulk SiO2 of 2.3Og/cm3 with increasing ion current density. The stress-free SiO2 film can be obtained at the ion current density of around 0.5 μA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 517
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yamada, I. and Takagi, T., IEEE Trans. Electron Devices, ED–34, 1018 (1987)Google Scholar
2. Hasan, M.-A., Knall, J., Bamett, S.A., Rockett, A., Sungren, J.-E. and Greene, J.E., J. Vac. Sci. Technol. B5, 1332 (1987)CrossRefGoogle Scholar
3. Minowa, Y. and Ito, H., J. Vac. Sci. Technol. B6, 473 (1988)CrossRefGoogle Scholar
4. Yamada, I., Usui, H., Tanaka, S., Dahmen, U. and Westmacott, K.H., J. Vac. Sci. Technol. A8, 1443 (1990)CrossRefGoogle Scholar
5. Kawagoe, Y., Yamanishi, K., Tanaka, M., Imada, K. and Sato, K., Nucl. Instr. and Meth. B59/60, 1426 (1991)CrossRefGoogle Scholar
6. Takagi, T., Proc.9th Intl. Symp. Ion & Plasma Assisted Technology, ed. Ocechsner, H., 52 (1985)Google Scholar
7. Ito, H., Kajita, N., Yamaji, S. and Minowa, Y., Jpn. J. Appl. Phys. Vol.30, 11B, 266 (1991)Google Scholar