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High Density Plasma Processing of Microcrystalline Si Thin Films

Published online by Cambridge University Press:  01 February 2011

P. C. Joshi ,
A. T. Voutsas  and
J. W. Hartzell
P. C. Joshi
Affiliation:
SHARP Laboratories of America, Inc., LCD Process Technology Laboratory, 5700 NW Pacific Rim Blvd., Camas, WA 98607
A. T. Voutsas
Affiliation:
SHARP Laboratories of America, Inc., LCD Process Technology Laboratory, 5700 NW Pacific Rim Blvd., Camas, WA 98607
J. W. Hartzell
Affiliation:
SHARP Laboratories of America, Inc., LCD Process Technology Laboratory, 5700 NW Pacific Rim Blvd., Camas, WA 98607
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Abstract

In the present work, we report on the fabrication of high quality microcrystalline Si thin films by high-density PECVD technique. The typical deposition rate of the HD-PECVD μ-Si thin films was greater than 350 Å/min in the H2/SiH4 ratio range of 20-100. For a 150-nm-thick film deposited at a H2/SiH4 ratio of 20, the typical microcrystalline volume fraction and the average crystallite size corresponding to <111> orientation were 75% and 160 Å, respectively. The observed growth and properties of the μ-Si thin films show the potential of the high-density PECVD technique for the low temperature processing of high quality films with superior control of bulk and interfacial characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A19.3
Copyright
Copyright © Materials Research Society 2005

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