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A High Efficiency, Purcell-enhanced Microcavity Single Photon Emitting Diode

Published online by Cambridge University Press:  31 January 2011

David J.P. Ellis ,
Anthony J. Bennett ,
Samuel J. Dewhurst ,
Christine A. Nicoll ,
David A. Ritchie  and
Andrew J. Shields
David J.P. Ellis
Affiliation:
david.ellis@crl.toshiba.co.uk, Toshiba Research Europe Ltd, Cambridge, United Kingdom
Anthony J. Bennett
Affiliation:
anthony.bennett@crl.toshiba.co.uk, Toshiba Research Europe Ltd, Cambridge, United Kingdom
Samuel J. Dewhurst
Affiliation:
sjd65@cam.ac.uk, University of Cambridge, Cavendish Laboratory, Cambridge, United Kingdom
Christine A. Nicoll
Affiliation:
can24@cam.ac.uk, University of Cambridge, Cavendish Laboratory, Cambridge, United Kingdom
David A. Ritchie
Affiliation:
dar11@cam.ac.uk, University of Cambridge, Cavendish Laboratory, Cambridge, United Kingdom
Andrew J. Shields
Affiliation:
andrew.shields@crl.toshiba.co.uk, Toshiba Research Europe Ltd, Cambridge, United Kingdom
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Abstract

Efficient, high-frequency quantum light sources are a prerequisite for advanced quantum information processing. Here, we report the observation of a Purcell enhancement in the radiative decay rate of a single quantum dot, embedded in a microcavity light-emitting diode structure. An annulus of low-refractive-index aluminium oxide, formed by wet oxidation, is used to simultaneously achieve lateral confinement of both the optical mode and the current through the device. This technique reduces the active area of the device without impeding the electrical properties of the p-i-n diode. We measure a photon collection efficiency of 14 ± 1% and demonstrate single photon electroluminescence at repetition rates up to 0.5 GHz.

Keywords

III-Vluminescencephotoemission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1208: Symposium O – Excitons and Plasmon Resonances in Nanostructures II , 2009 , 1208-O03-04
Copyright
Copyright © Materials Research Society 2010

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References

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