Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-30T21:41:09.451Z Has data issue: false hasContentIssue false
  • English
  • Français

High Gain, Silicon-on-insulator Photodetector with Multiple Gates and a Nanowire Based Narrow-wide-narrow Channel

Published online by Cambridge University Press:  08 March 2011

Anita Fadavi Roudsari ,
Simarjeet S. Saini ,
Nixon O  and
M. P. Anantram
Anita Fadavi Roudsari
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Simarjeet S. Saini
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Nixon O
Affiliation:
DALSA Corporation, Waterloo, Ontario, Canada N2V 2E9
M. P. Anantram
Affiliation:
Electrical Engineering Department, University of Washington, Seattle, WA 98195-352500 U.S.A
Get access

Abstract

We propose a phototransistor geometry that incorporates silicon nanowires (SiNW) in the device channel. A set of two gates controls the charge flow inside the NW. This improves the device photo-response more than 10x when compared with a single gate phototransistor, leading to a photo-responsivity of greater than 104(A/W), while the dark properties of both devices are similar.

Keywords

nanostructureopticaldevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Nanomaterials Integration for Electronics, Energy and Sensing , 2011 , mrsf10-1305-aa08-02
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, J., Analyst, 130, 4, pp. 421–426, (2005).Google Scholar
2. Koo, S. M., Li, Q., Edelstein, M. D., Richter, C. A., and Vogel, E. M., Nano Lett., 5, 12, pp. 2519–2523, (2005).Google Scholar
3. Agarwal, A., Buddharaju, K., Lao, I. K., Singh, N., Balasubramanian, N., and Kwong, D.L., Sens. Actuators A, 145-146, pp. 207–213, (2008).Google Scholar
4. Zhang, J., Boyd, A., Tselev, A., Paranjape, M., and Barbara, P., Appl. Phys. Lett., 88, 12, pp. 123112, (2006).Google Scholar
5. Kind, H., Yan, H., Messer, B., Law, M., and Yang, P., Adv. Mater., 14, 2, pp. 158–160, (2002).Google Scholar
6. Zhang, A., You, S., Soci, C., Liu, Y., Wang, D., and Lo, Y. H., Appl. Phys. Lett., 93, 12, pp. 121110, (2008).Google Scholar
7. Park, J. H., Seo, S. H., Wang, I. S., Yoon, H. J., Shin, J. K., Choi, P., Jo, Y., and Kim, H., Jpn. J. Appl. Phys., 43, 4B, pp. 2050–2053, (2004).Google Scholar
8. Choi, H. G., Choi, Y. S., Jo, Y. C., and Kim, H., Jpn. J. Appl. Phys., 43, 6B, pp. 3916–3918, (2004).Google Scholar
9. Do, M. Y., Lee, S. H., Seo, S. H., Shin, J. K., Choi, P., Park, J. H., and Kim, H., Sens. Mater., 18, 3, pp. 139–149, (2006).Google Scholar
10. Yamamoto, H., Taniguchi, K., and Hamaguchi, C., Jpn. J. Appl. Phys., 35, 2B, pp. 1382–1386, (1996).Google Scholar
11. Atlas, Silvaco, www.Silvaco.com.Google Scholar