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High Mobility Nanocrystalline Silicon TFTs for Display Application

Published online by Cambridge University Press:  01 February 2011

Min-Koo Han  and
Sang-Myeon Han
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, School of Electrical Engineering, School of Electric Engineering and Computer Science (#50), Seoul National University, Seoul, 151-742, Korea, Republic of
Sang-Myeon Han
Affiliation:
smhan@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, School of Electric Engineering and Computer Science (#50), Seoul National University, Seoul, 151-742, Korea, Republic of
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Abstract

Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) of which active layer thickness was 100nm were fabricated using inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. The fabricated nc-Si TFT exhibits rather high field effect mobility exceeding 22cm2/Vs and excellent sub-threshold slope of 0.45V/dec. The nc-Si film deposited 150°C as an active layer of the TFT shows high crystallinity more than 70% and very thin incubation layer less than 20nm. ICP-CVD provides high density plasma with reduced ion bombardment during the deposition on nc-Si and He dilution can enhance the decomposition of SiH4 into Si, SiHX radicals and atomic H, so that high quality nc-Si film can be fabricated. The gate insulator SiO2 film deposited by ICP-CVD at 150°C shows good electrical characteristics such as flat band voltage of -1.8V and breakdown voltage of 6.2MV/cm.

Keywords

displaythin filmSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A11-01
Copyright
Copyright © Materials Research Society 2007

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References

1 Smith, P. M., Carey, P. G., and Sigmon, T. W., Appl. Phys. Lett., Vol. 70, No 3, pp. 342–344, 1997.Google Scholar
2 Han, Sang-Myeon, Lee, Min-Cheol, Shin, Moon-Young, Park, Joong-Hyun and Han, Min-Koo, Proc. IEEE, Vol. 93, No. 7, pp. 1297–1305, 2005.Google Scholar
3 Young, N. D., French, I. D., Trainor, M. J., Murley, D. T., McCulloch, D. J., Wilks, R. W., Int. Display Workshop (IDW) 99, Sendai, Japan, pp. 219–222, 1999.Google Scholar
4 Stewart, R. G., Dresner, J., Weisbrod, S., Huq, R. I. and Plus, D., SID 95 Digest., pp. 89–92, 1995.Google Scholar
5 Salleo, A. and Street, R. A., J. Appl. Phys., 94, pp. 471–479, 2003.Google Scholar
6 Cabarrocas, P. Rocai, Brenot, R., Bulkin, P., Vanderhaghen, R., and Drevillon, B., J. Appl. Phys., Vol. 86, 12, pp. 7079–7081, 1999.Google Scholar
7 Goto, Masashi, Toyoda, Hirotaka, Kitagawa, Masatoshi, Hirao, Takashi and Sugai, Hideo, Jpn. J. Appl. Phys. Vol. 36, pp. 3714–3720, 1997.Google Scholar
8 Hopwood, J., Plasma Sources Sci. Technol. Vol. 1, pp. 109–116, 1992.Google Scholar
9 Keller, J. H., Plasma Sources Sci. Technol. Vol. 5, pp. 166–172, 1996.Google Scholar
10 Kondo, Michio, Fujiwara, Hiroyuki, Matsuda, Akihisa, Thin Solid Films, 430, pp. 130–134, 2003.Google Scholar
11 Voutsasa, A. T., Hatalis, M. K. Boyce, J. and Chiang, A., J. Appl. Phys. 78 (12), pp. 6999–7005, 1995.Google Scholar
12 Kroll, U., Meier, J., and Shah, A., Mikhailov, S. and Weber, J., J. Appl. Phys. 80 (9), pp. 4971–4975, 1996.Google Scholar
13 Kondo, Michio, Fukawa, Makoto, Guo, Lihui, Matsuda, Akihisa, J, Non-Cryst. Solids 266-269, pp. 84–89, 2000.Google Scholar
14 Vossen, John L., Kern, Werner, Thin Film Processes II, Academic Press, 1991.Google Scholar
15 Mukherjee, C., Anandan, C., Seth, T., Dixit, P. N., and Bhattacharyya, R., J. Vac. Sci. Technol., A 17(6), pp. 3202–3208, 1999.Google Scholar
16 Han, Sang-Myeon, Park, Joong-Hyun, Shin, Hee-Sun, Choi, Young-Hwan and Han, Min-Koo, Tech. Digest. of International Electron Devices Meeting (IEDM) 2005, pp. 125–128, 2005.Google Scholar
17 Schroder, Dieter K., Semiconductor Material and Device Characterization, 2nd edition, John Wiley and Sons, pp. 337–368, 1998.Google Scholar
18 Han, Sang-Myeon, Shin, Moon-Young, Lee, Min-Cheol, Park, Joong-Hyun and Han, Min-Koo, Electrochem. and Solid-State Letters, 9 (2), H5–H7, 2006.Google Scholar
19 Choi, W. K., Han, K. K., Choo, C. K., Chim, W. K. and Lu, Y. F., J. Appl. Phys. 83 (9), pp. 4810–4815, 1998.Google Scholar
20 Cheng, I-C. and Wagner, S., IEE Proc.-Circuits Devices Syst., Vol. 150, No. 4, pp 339–344, 2003.Google Scholar