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High Performance Bottom Gate μc-Si TFT Fabricated by Microwave Plasma CVD

Published online by Cambridge University Press:  01 February 2011

Akihiko Hiroe ,
Akinobu Teramoto  and
Tadahiro Ohmi
Akihiko Hiroe
Affiliation:
teramoto@fff.niche.tohoku.ac.jp, Tohoku University, New Industry Creation Hatchery Center, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, N/A, Japan
Akinobu Teramoto
Affiliation:
hiroe@fff.niche.tohoku.ac.jp, Tohoku University, New Industry Creation Hatchery Center, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, N/A, Japan
Tadahiro Ohmi
Affiliation:
ohmi@fff.niche.tohoku.ac.jp, Tohoku University, New Industry Creation Hatchery Center, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, N/A, Japan
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Abstract

Deposition trend of μc-Si was investigated using microwave (2.45GHz) plasma enhanced CVD. μc-Si films with the preferential orientation of (111) and (220) were deposited and compared. Raman scattering results show that the (111) preferentially oriented film has higher crystallinity while ESR measurements result in the fact that the (220) preferentially oriented film has smaller dangling bond density. Bottom gate thin film transistors (TFT's) were fabricated using these μc-Si films as channel layer and evaluated. H2 plasma post-treatment has been found to be effective to improve the TFT characteristics. Mobility of about 1.4cm2/Vsec and on/off ratio of more than 105 have been achieved.

Keywords

thin filmSiplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A13-04
Copyright
Copyright © Materials Research Society 2008

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References

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