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High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

Published online by Cambridge University Press:  01 February 2011

Kyung Ho Kim ,
Yuriy Vygranenko ,
Mark Bedzyk ,
Jeff Hsin Chang ,
Tsu Chiang Chuang ,
Denis Striakhilev ,
Arokia Nathan ,
Gregory Heiler  and
Timothy Tredwell
Kyung Ho Kim
Affiliation:
khkim@venus.uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, 200 University Ave.W, Waterloo, N2L 3G1, Canada, 1-519-569-9900, 1-519-746-3077
Yuriy Vygranenko
Affiliation:
yuriy@venus.uwaterloo.ca, Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Mark Bedzyk
Affiliation:
mark.bedzyk@kodak.com, Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Jeff Hsin Chang
Affiliation:
jhchang@venus.uaterloo.ca, Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Tsu Chiang Chuang
Affiliation:
tcchuang@venus.uwaterloo.ca, Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Denis Striakhilev
Affiliation:
dastriak@venus.uwaterloo.ca, Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Arokia Nathan
Affiliation:
anathan@venus.uwaterloo.ca, University College, London Centre for Nanotechnology, London, WC1H OAH, United Kingdom
Gregory Heiler
Affiliation:
gregory.heiler@kodak.com, Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Timothy Tredwell
Affiliation:
timothy.tredwell@kodak.com, Eastman Kodak Company, Rochester, NY, 14652-3487, United States
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Abstract

We report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 1015 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.

Keywords

sensoramorphousphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A19-05
Copyright
Copyright © Materials Research Society 2007

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References

1Technology and Applications of Amorphous Silicon, Ed. R. A. Street, (Springer, 2000).Google Scholar
2 Gleskova, H., Cheng, I. C., Kattamis, A., Wagner, S., Suo, Z., ECS Transactions 3, 249 (2006).Google Scholar
3 Ishikawa, Y., Schubert, M., Jpn. J. Appl. Phys. 45, 6812 (2006).Google Scholar
4 Gleskova, H., Wagner, S., Suo, Z., MRS Symp. Proc. 508, 73 (1998).Google Scholar
5 Nathan, A. et al., MRS Symp. Proc. 814, 61 (2004).Google Scholar
6 Vygranenko, Y., Chang, J.H., Nathan, A., IEEE J. Quant. Electronics 41. 697 (2005).Google Scholar
7 Nanomura, S. et al., J. Non-Crystalline Solids 266-269, 474 (2000).Google Scholar
8 Spanakis, E. et al., J. Appl. Phys., 89, 4294 (2001).Google Scholar
9 Schropp, R.E.I., Zeman, M. Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology (Kluwer 1998).Google Scholar
10 Street, R.A., Phil. Mag. B 63, 1343 (1991).Google Scholar
11 Theil, J.A., MRS Symp. Proc. 762 publ.#A21.4.1 (2003).Google Scholar
12 Street, R.A., Appl. Phys. Lett, 57, 1334 (1990).Google Scholar
13 Arch, J.K., Fonash, S.J., Appl. Phys. Lett. 60, 757 (1992); J. Appl. Phys. 72, 4483 (1992).Google Scholar
14 Ilie, A., Equer, B., Phys. Rev. B 57, 15349 (1998).Google Scholar
15 Vygranenko, Y., Kerr, R., Chang, J.H., Striakhilev, D., Nathan, A., Heiler, G., Tredwell, T., MRS Spring meeting 2007, A12.2.Google Scholar