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High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser

Published online by Cambridge University Press:  31 January 2011

Alessandro Baiano ,
Ryoichi Ishihara  and
Kees Beenakker
Alessandro Baiano
Affiliation:
a.baiano@tudelft.nl, TU Delft, DIMES - ECTM, Delft, Netherlands
Ryoichi Ishihara
Affiliation:
r.ishihara@tudelft.nl, TU Delft, DIMES - ECTM, Delft, Netherlands
Kees Beenakker
Affiliation:
beenakker@dimes.tudelft.nl, TU Delft, DIMES - ECTM, Delft, Netherlands
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Abstract

In this paper we investigate the carriers mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors (SG-TFTs) by μ-Czochralski process at low-temperature process (< 350 °C). The high laser energy density nearby the ablation phenomenon that completely melts the silicon layer during the crystallization is responsible for high tensile strain and good crystal quality of the silicon grains, which lead carriers mobility enhancement.

Keywords

laser ablationzone meltingthermal stresses
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A12-01
Copyright
Copyright © Materials Research Society 2009

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