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High Quality a-SiO:H Films and Their Application to a-Si Solar Cells

Published online by Cambridge University Press:  21 February 2011

S. Fujikake ,
H. Ohta ,
A. Asano ,
Y. Ichikawa  and
H. Sakai
S. Fujikake
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. 2–2–1, Nagasaka, Yokosuka, Kanagawa 240–01, Japan
H. Ohta
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. 2–2–1, Nagasaka, Yokosuka, Kanagawa 240–01, Japan
A. Asano
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. 2–2–1, Nagasaka, Yokosuka, Kanagawa 240–01, Japan
Y. Ichikawa
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. 2–2–1, Nagasaka, Yokosuka, Kanagawa 240–01, Japan
H. Sakai
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. 2–2–1, Nagasaka, Yokosuka, Kanagawa 240–01, Japan
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Abstract

Hydrogenated amorphous silicon oxide (a-SiO:H) films were prepared by rf glow discharge decomposition of SiH4, CO2 and H2 gas mixture. These films showed better properties than a-SiC:H films. By applying the a-SiO:H to the p-layer, we attained an efficiency of 12.5% for 1cm2 single junction solar cells and a total-area efficiency of 10.1% for 30cm × 40cm tandem submodules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 875
Copyright
Copyright © Materials Research Society 1992

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References

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