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High quality GaN layers grown on slightly miscut sapphire wafers

Published online by Cambridge University Press:  01 February 2011

Peter Brüeckner ,
Martin Feneberg ,
Klaus Thonke ,
Frank Habel  and
Ferdinand Scholz
Peter Brüeckner
Affiliation:
peter.brueckner@uni-ulm.de, University of Ulm, Optoelectronics Department, Albert-Einstein-Alee 45, 89081 Ulm, Ulm, N/A, 89081, Germany
Martin Feneberg
Affiliation:
martin.feneberg@uni-ulm.de, Germany
Klaus Thonke
Affiliation:
klaus.thonke@uni-ulm.de, Germany
Frank Habel
Affiliation:
habel@fcm-germany.com, Germany
Ferdinand Scholz
Affiliation:
ferdinand.scholz@uni-ulm.de, Germany
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Abstract

HVPE grown layers typically show a high density of pyramidal structures on the surface. We found that a slight off-orientation of the substrate totally suppresses the development of these structures. Further we found that a misorientation toward the m-plane of GaN features a smoother surface morphology, compared to an off-orientation towards the a-plane. After the improvement of the surface morphology and other properties of the HVPE grown layers, we studied self-separation processes. Our approaches to remove the thick GaN-layer from the substrate were a low-temperature interlayer and a structured dielectric mask.

Keywords

vapor phase epitaxy (VPE)stress/strain relationshipcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF21-04
Copyright
Copyright © Materials Research Society 2006

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References

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