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High Quality P-Doped μc-Si:H Films as Obtained by low Temperature Lpcvd of Disilane

Published online by Cambridge University Press:  28 February 2011

C. Manfredotti ,
F. Fizzotti ,
G. Amato ,
L. Boarino  and
M. Abbas
C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, Italy.
F. Fizzotti
Affiliation:
Experimental Physics Dept., University of Torino, Italy.
G. Amato
Affiliation:
National Electrotechnical Institute G. Ferraris, Torino, Italy
L. Boarino
Affiliation:
National Electrotechnical Institute G. Ferraris, Torino, Italy
M. Abbas
Affiliation:
National Institute of Silicon Technology NO. 25, H-9 Islamabad, Pakistan.
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Abstract

Both B- and P- doped silicon films deposited by Low Pressure Chemical Vapor Deposition (LPCVD) at 300 °C (p-type) and 420 °C (n-type) have been characterized by optical absorption, Photothermal Deflection Spectroscopy (PDS), resistivity, Elastic Recoil Detection Analysis (ERDA), Transmission Electron Microscopy (TEM), Convergent-Beam Electron Diffraction (CBED) and Raman spectroscopy measurements. P-doped films, deposited at large PH3 flux rates, show a high degree of microcrystallinity, indicating that P activates the nucleation process even at low temperatures. In this case, values of activation energy of resistivity as low as 0.007 eV were obtained. Both TEM and RAMAN results confirm a volume percentage of micro crystallinity above 30%. On the contrary, B-doped samples are not microcrystalline at least in the doping range investigated, and show a behaviour not different from samples deposited by PECVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 507
Copyright
Copyright © Materials Research Society 1993

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References

1. Amato, G., Della Mea, G., Fizzotti, F., Manfredotti, C., Marchisio, R. and Paccagnella, A., Phys. Rev. B 41, 6627 (1991).Google Scholar
2. Amato, G., Fizzotti, F., Manfredotti, C., Menna, P., Nobile, G., Spagnolo, R., Phys. Stat. Sol (b) 120, 119(1992).Google Scholar
3. Kanoh, H., Sugiura, O., Breddels, P. A. and Matsumura, M., Mat. Res. Soc. Symp. Proc. 192 367 Materials Research Society (Pittsburgh), 1990.Google Scholar
4. Hatalis, M. K. and Greve, D. W., Mat. Res. Soc. Symp. Proc. 106. Materials Research Society (Pittsburgh), 1988.Google Scholar
5. Ashida, Y, Mishima, Y, Hirose, M., Osaka, Y and Kojima, K. Jap Jour. Appl. Phys. 22 L129, 1984.Google Scholar
6. Hegedus, S.S., Rocheleau, R.E. Buchanan, W. and Baron, B.N., Jour. App. Phys. 61 381, 1987.Google Scholar
7. Zallen, R., in Fluctuation Phenomena, edited by Montroll, E. W. and Lebowitz, J. L. (North-Holland, Amsterdam, 1979).Google Scholar
8. Iqbal, Z., Veprek, S., Webb, A. P. and Capezzuto, P., Sol. State Comm. 21, 993–996, (1981).Google Scholar
9. Nemanich, R. J., Buehler, E. C., Legrice, Y. M., Shroder, R., Parsons, G. N., Wang, C., Lucovsky, G. and Boyce, R., Jour. non-Cryst. Sol. 114, 813. (1989).Google Scholar
10. Tsu, R., Gonzalez-Hernandez, J., Chao, S. S., Lee, S. C. and Tanaka, K., Appl. Phys Lett. 40, 534, (1982).Google Scholar
11. Kim, H. and Thompson, C. V., Mat. Res Soc. Symp. Proc. 106 Materials Research Society, (Pittsburgh) 1988.Google Scholar
12. Kim, D. M., Qian, F., Bickford, C. U. and Yu, S., Mat. Res Soc. Symp. Proc. 106 Materials Research Society, (Pittsburgh) 1988.Google Scholar
13. Beyer, W. and Overhof, H., in Semiconductor and Semimetals, Vol. 21C, Pankove, J.I. editor (Academic Press, New York, 1984).Google Scholar
14. Conte, G., Terzini, E., Addonizio, M.L., Garozzo, M., Rubino, A., Sinno, G., Loreti, S., Alessandrini, P., to be published on Proc. XI European Photovoltaic Solar Energy Conference, 12–16 Oct. 1992, Montreux, Switzerland.Google Scholar
15. Lucovsky, G. and Wang, C., Mat. Res. Soc. Symp. Proc. 219. 377, Material Research Society, (Pittsburgh), 1991.Google Scholar
16. Amato, G., Boero, G., Fizzotti, F., Manfredotti, C. and Abbas, M., to be published on Proc. XI European Photovoltaic Solar Energy Conference, 12–16 Oct. 1992, Montreux, Switzerland.Google Scholar
17. Pierz, K., Hilgenberg, B., Mell, H. and Weiser, G., Jour. Non-Cryst. Solids 97/98. 63 1987.Google Scholar
18. Queisser, H. J. and Werner, J. H., Mat. Res Soc. Symp. Proc. 106 Materials Research Society, (Pittsburgh) 1988.Google Scholar
19. Werner, J. H., in Polycrystalline Semiconductors - Physical Properties and Applications, Harbeke, G. ed., p. 77, Springer, (Berlin) 1985.Google Scholar