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High Quality Si and Sil-xGex, Films and Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD)

Published online by Cambridge University Press:  25 February 2011

M. L. Green ,
D. Brasen ,
H. Temkin ,
V. C. Kannan  and
H. S. Luftman
M. L. Green
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D. Brasen
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
H. Temkin
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
V. C. Kannan
Affiliation:
† AT&T Bell Laboratories, Allentown, Pa. 18103
H. S. Luftman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Rapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in-situ and immediately thereafter deposit epitaxial layers. Very thin layers (<100 Å) can be deposited by either gas or lamp power switching. We report here the growth of high quality Si and Si-Ge layers, both intrinsic and in-situ doped, and the in-situ growth of a heterojunction bipolar transistor. These HJBT's show gains as high as 350 and are promising as microwave transistors. RTCVD processing is a production-worthy technology that will play an important role in the manufacture of future heterostructural devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 55
Copyright
Copyright © Materials Research Society 1989

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References

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