Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-15T01:03:28.788Z Has data issue: false hasContentIssue false
  • English
  • Français

High Rate Deposition of DC Magnetron Sputtered a-Si for Photoreceptors

Published online by Cambridge University Press:  26 February 2011

E. Niemann ,
R. Herkert ,
D. Leidich  and
W. Senske
E. Niemann
Affiliation:
AEG- Research Laboratories, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
R. Herkert
Affiliation:
AEG- Research Laboratories, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
D. Leidich
Affiliation:
AEG- Research Laboratories, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
W. Senske
Affiliation:
AEG- Research Laboratories, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
Get access

Abstract

High rate deposition of a-Si-layers is an important condition for an economical production of a-Si devices. We have obtained deposition rates of up to 30 μm/h by reactive DC magnetron sputtering from n-type and p-type doped monocrystalline silicon targets. The electrical properties of the films (dark conductivity, photoconductivity, activation energy) were examined as a function of the hydrogen partial pressure for the deposition rate of about 10 μm/h. The film structure is investigated by scanning electron microscope (surface and fracture) and hydrogen evolution method. The high rate deposited films show a homogeneous appearance exhibiting voids. The electrophotographic properties were examined for films on flat substrates. The charge acceptance for positive and negative charging is about 35V/pm with a low dark decay for films of the structure Al/SiOx/a-Si/SiOx. ESCA-measurements show an a-SiOx-layer of 2nm on the top. The spectral sensivitity is examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 61
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kakinuma, H., Nishikawa, S., Watanabe, T., Nihei, K., SPIE Vol.617, 109 (1986)Google Scholar
2. Senske, W., Marschall, N., SPIE Vol.617, 103 (1986)Google Scholar
3. Savvides, N., J.Appl.Phys. 55, 4232 (1984)Google Scholar
4. Beyer, W., J.of Non-Crystall. Sol. 97&98, 1027 (1987)CrossRefGoogle Scholar
5. Nakayama, Y., Natsuhara, T., Nakano, M., Yamamoto, N., T.Kawamura Jap.J.of Appl.Phys. 22, 453 (1982)Google Scholar