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High Resolution Auger Depth Profiles Using a Dual Ion Gun System

Published online by Cambridge University Press:  26 February 2011

S. Ingrey  and
J.P.D. Cook
S. Ingrey
Affiliation:
Bell-Northern Research, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, K1Y 4H7.
J.P.D. Cook
Affiliation:
Bell-Northern Research, P.O. Box 3511, Station C, Ottawa, Ontario, Canada, K1Y 4H7.
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Extract

A dual ion gun system has been proposed (D.E. Sykes et al, Appl. Surf. Sci. 5(1980)103) to reduce texturing and improve depth resolution during Auger sputter depth profiling. We have evaluated this ion gun configuration by profiling a variety of multilayer structures. With careful alignment of the guns, we have obtained a dramatic decrease in ion-induced texturing often seen when a single ion gun is used. This effect was particularly pronounced for polycrystalline Al films on Si where an order of magnitude improvement in depth resolution was achieved. Further refinements of the technique include the use of low energy (IkeV) grazing incidence xenon ions and a small electron beam probe area. Depth profiles obtained from Ni/Cr, W/Si, and GaAs/GaAlAs multilayer structures will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 699
Copyright
Copyright © Materials Research Society 1986

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References

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