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High Resolution Photoelectron Study of the Optimum Oxygen Doping Levels in High Tc Superconductors
Published online by Cambridge University Press: 15 February 2011
Abstract
The materials and electronic properties of the new cuprate superconductors are critically dependent upon both the oxygen stoichiometry and annealing history of the material. Improving Jc, Tc, and determining the underlying mechanism of superconductivity depend on a better understanding of these effects. In the study of Bi2Sr2CaCu2O8-δ we have combined standard material characterization techniques with high resolution angle resolved photoemission spectroscopy and resonant photoemission spectroscopy to illuminate these issues. Specifically, we make high quality single crystals of BSCCO and then anneal in different atmospheres and pressures. We correlate this with c-axis resistivity, a, b-plane resistivity, and resonant photoemission spectroscopy. In this way we can explain the macroscopic transport properties in terms of the electronic properties of the material determined from photoemission. We find that we can change the c-axis resistivity from non-metallic to metallic by adding oxygen and that this correlates with increased oscillator strength in the c-axis direction at the Fermi level.
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- Copyright © Materials Research Society 1993