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High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Published online by Cambridge University Press:  01 February 2011

R. Farrell ,
V. R. Pagán ,
A. Kabulski ,
Sridhar Kuchibhatla ,
J. Harman ,
K. R. Kasarla ,
L. E. Rodak ,
J. Hensel ,
P. Famouri  and
D. Korakakis
R. Farrell
Affiliation:
rfarrel1@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
V. R. Pagán
Affiliation:
vpagan@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
A. Kabulski
Affiliation:
akabulsk@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
Sridhar Kuchibhatla
Affiliation:
skuchibh@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
J. Harman
Affiliation:
jharman2@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
K. R. Kasarla
Affiliation:
kkasarla@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
L. E. Rodak
Affiliation:
lrodak@mix.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
J. Hensel
Affiliation:
J.Hensel@NETL.DOE.GOV, National Energy Technology Laboratory, P.O. Box 880, Morgantown, WV, 26507-0880, United States
P. Famouri
Affiliation:
Parviz.Famouri@mail.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
D. Korakakis
Affiliation:
Dimitris.Korakakis@mail.wvu.edu, West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, WV, 26506, United States
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Abstract

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Keywords

nitridepiezoelectricannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD06-18
Copyright
Copyright © Materials Research Society 2008

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References

1 Lee, J.W., Radu, I., Alexe, M., J. Materials Science, 13, 131–137, 2002).Google Scholar
2 Kano, Kazuhiko, Arakawa, Kazuki, Takeuchi, Yukihiro, Akiyama, Morito, Ueno, Naohiro, Kawahara, Nobuaki, Sensors and Actuators, A, 130–131, 397–402, 2006)Google Scholar
3 Fuflyigin, V., Salley, E., Osinsky, A., Norris, P., App. Phys. Letters, V. 77, 19, 2000)Google Scholar
4 Okada, Yasumasa, Tokumaru, Yozo, J. Appl. Phys. 56 (2), 1984)Google Scholar
5 Yim, W.M., Paff, R.J., J. Appl. Phys. 45(3), 1974)Google Scholar