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High Temperature Silicide Thin-Film Thermocouples

Published online by Cambridge University Press:  25 February 2011

Kenneth G. Kreider
Kenneth G. Kreider*
Affiliation:
National Institute of Standards and Technology, Chemical Science and Technical Laboratory, Gaithersburg, MD 20899
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Abstract

High-temperature silicides have been used in mechanical structures, heating elements, and electronic, CMOS applications. Their stability in high temperature oxidizing environments and excellent electrical conductivity may also make them useful as high temperature thin-film sensors in harsh environments. We have investigated sputter deposited MoSi2, ReSi2, TaSi2, TiSi2, and WSi2 thin films and characterized their performance as thermoelements and stability up to 1200 °C. A multilayer technique was developed to ensure constant silicide stoichiometry during oxidation thereby maintaining a constant Seebeck coefficient. In addition techniques were developed to suppress the formation of metal oxides from the silicides. The results indicated excellent stability of Seebeck coefficient up to 1200 °C. These results are compared with the problems of thin film instability in the Seebeck coefficient found in noble metal thermocouples. Potential applications for temperature and heat transfer measurements will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 322: Symposium F – High-Temperature Silicides and Refractory Alloys , 1993 , 285
Copyright
Copyright © Materials Research Society 1994

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