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High-Quality InAs/A1Sb Superlattices with AlAs and InSb Interfaces

Published online by Cambridge University Press:  22 February 2011

Brian R. Bennett ,
B.V. Shanabrook ,
E.R. Glaser  and
R.J. Wagner
Brian R. Bennett
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347
B.V. Shanabrook
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347
E.R. Glaser
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347
R.J. Wagner
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5347
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Abstract

The presence of two species of both cations and anions permits the construction of InAs/AlSb heterostructures with either AlAs- or InSb-like interfaces. InAs/AlSb superlattices with both types of interfaces were grown using migration-enhanced epitaxial techniques. The layer quality and control of interfacial composition were confirmed by x-ray diffraction, Raman spectroscopy, and photoluminescence measurements. We demonstrate that high-quality superlattices with both InSb- and AlAs-bonded interfaces can be achieved with appropriate growth temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 253
Copyright
Copyright © Materials Research Society 1994

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References

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