Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-10T11:30:56.950Z Has data issue: false hasContentIssue false
  • English
  • Français

High-rate Etching of Organic Materials using Gas Cluster Beam

Published online by Cambridge University Press:  04 February 2011

Takanori Suda ,
Noriaki Toyoda  and
Isao Yamada
Takanori Suda
Affiliation:
Incubation center, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
Noriaki Toyoda
Affiliation:
Incubation center, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
Isao Yamada
Affiliation:
Incubation center, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
Get access

Abstract

Organic materials or polymers, which are widely used in electronic devices, are easily damaged by energetic ion or electron bombardment. Therefore, it is difficult to use conventional ion or electron beam processes for etching organic materials. In this study, a gas cluster beam possessing kinetic energy of the order of several hundred eV was used as a novel means to realize high-rate, low-damage etching. Polyethylene (PE) and polyvinyl chloride (PVC) were used as the target organic materials. Using a SF6 cluster beam, the etching depth suddenly increased when the nozzle gas pressure exceeded 0.6 MPa, as in the case of cluster beam formation. When the SF6 gas pressure in the nozzle was 1.2 MPa, the etching rates of PVC and PE were 2.88 μm/s and 1.62 μm/s, respectively. The dependence of the etching effect on cluster size was studied by varying the gas temperature. The etching depth of PVC increased with increasing average cluster size and intensity of the beam. The flow rate of the gas was constant; hence, etching of the organic materials did not occur because of the individual impact of the molecular beam. In fact, it occurred because of the neutral cluster, which had a large total kinetic energy. The energy per molecule of the gas cluster beam is of the order of several tens of meV; hence, high-rate, low-damage etching of organic materials can be potentially achieved.

Keywords

organicsurface reactioncluster assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g06-44
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tang, C. W. and Vanslyke, S. A., Appl. Phys. Lett. 51, 913–915 (1987).Google Scholar
2. Maggioni, G., Vomiero, A., Carturan, S., Scian, C., Mattei, G., Bazzan, M., de Julián Fernández, C., Mazzoldi, P., Quaranta, A. and Della Mea, G., Appl. Phys. Lett. 85, 5712–5714 (2004).Google Scholar
3. Toyoda, N., Yamada, I., Nucl. Instr. and Meth. in Phys. Res. B 261, 643–646 (2007).Google Scholar
4. Yamada, I., Matsuo, J., Toyoda, N., Kirkpatrick, A., Mater. Sci. Eng. R 34, 234–241 (2001).Google Scholar
5. Yoshino, Y., Seki, T., Senoo, T., Koike, K., Ninomiya, S., Aoki, T., Matsuo, J., Proceedings of Conference on 18th International Conference on Ion Implantation Technology, (2010).Google Scholar
6. Hagena, O. F., Obert, W., J. Chem. Phys. 56, 1793–1802 (1972).Google Scholar
7. Seki, T. and Matsuo, J., Nucl. Instr. and Meth. in Phys. Res. B 241, 604 (2005).Google Scholar
8. Becker, E. W., Bier, K. and Henkes, W., Z. Physik 146, 333 (1956).Google Scholar
9. Okoshi, M. and Inoue, N., Jpn. J. Appl. Phys. 42, 5642–5647 (2003).Google Scholar