Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-28T10:21:20.974Z Has data issue: false hasContentIssue false
  • English
  • Français

Homoepitaxial growth of CVD diamond: effect of nitrogen contaminations on growth rates

Published online by Cambridge University Press:  10 February 2011

C. Wild ,
R. Locher  and
P. Koidl
C. Wild
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
R. Locher
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
P. Koidl
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
Get access

Abstract

Homoepitaxial diamond films were deposited on {100} and {111} oriented substrates using microwave plasma assisted CVD. The growth rate was measured in situ using laser interferometry. Various amounts of 15N2 were admixed to the process gas (0-50 ppm). The growth rate on {100} faces was found to increase significantly (by a factor 1.8) with increasing 15N2 content. In contrast, on { 111 } faces only a minor increase of the growth rate upon nitrogen admixture was observed. These findings are in perfect agreement with the observed influence of nitrogen contaminations on the α-parameter, as derived by the X-ray texture analysis of polycrystalline diamond films [1]

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 75
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Locher, R., Wild, C., Herres, N., and Koidl, P. Appl. Phys. Lett. 65, 34 (1994)Google Scholar
[2] MÜller-Sebert, W., Wörner, E., Fuchs, F., Wild, C. and Koidl, P. Appl. Phys. Lett., in printGoogle Scholar
[3] Cao, G.Z., Driessen, F.A.J.M., Bauhuis, G.J., and Giling, L.J. J. Appl. Phys. 78, 3125 (1995)Google Scholar
[4] Jin, S. and Moustakas, T.D., Appl. Phys. Lett. 65, 403 (1994)Google Scholar
[5] Samlenski, R., Haug, C., Brenn, R., Wild, C., Locher, R. and Koidl, P.; Appl. Phys. Lett. 67, 2798 (1995)Google Scholar
[6] Bergmaier, A., Dollinger, G., Faestermann, T., Frey, C.M., Gerguson, M., Gfittler, H., Schulz, G., Willerscheid, H.; Diamond and Related Materials, in printGoogle Scholar
[7] Wild, C., Kohl, R., Herres, N., Milller-Sebert, W. and Koidl, P. Diamond and Related Materials 3, 373 (1994)Google Scholar
[8] Maier, K., PhD-Thesis, University Freiburg (1994)Google Scholar