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HVPE GaN with Low Concentration of Point Defects for Power Electronics

Published online by Cambridge University Press:  13 February 2015

M. A. Reshchikov ,
J.D. McNamara ,
A. Usikov ,
H. Helava  and
Yu. Makarov
M. A. Reshchikov
Affiliation:
Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA
J.D. McNamara
Affiliation:
Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, USA
A. Usikov
Affiliation:
Nitride Crystals, Inc. 181E Industry Ct., Ste. B, Deer Park, NY 11729, USA Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg, Russia
H. Helava
Affiliation:
Nitride Crystals, Inc. 181E Industry Ct., Ste. B, Deer Park, NY 11729, USA
Yu. Makarov
Affiliation:
Nitride Crystals, Inc. 181E Industry Ct., Ste. B, Deer Park, NY 11729, USA
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Abstract

We have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ∼1017 cm-3. The concentrations of defects responsible for other defect-related PL bands rarely exceed 1015 cm-3.

Keywords

luminescencevapor phase epitaxy (VPE)semiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t05-05
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Saitoh, Y., Sumiyoshi, K., Okada, M., Horii, T., Miyazaki, T., Shiomi, H., Ueno, M., Katayama, K., Kiyama, M., and Nakamura, T., Appl. Phys. Express 3, 081001 (2010).CrossRefGoogle Scholar
Wang, Y., Xu, H., Alur, S., Sharma, Y., Tong, F., Gartland, P., Issacs-Smith, T., Ahyi, C., Williams, J., Park, M., Wheeler, G., Johnson, M., Allerman, A. A., Hanser, A., Paskova, T., Preble, E. A., and Evans, K. R., Phys. Stat. Sol. (c) 8, 2430 (2011).Google Scholar
Reshchikov, M. A. and Morkoç, H., J. Appl. Phys. 97, 061301 (2005).CrossRefGoogle Scholar
Reshchikov, M. A., Usikov, A., Helava, H., and Makarov, Yu., Appl. Phys. Lett. 104, 032103 (2014).CrossRefGoogle Scholar
Paskov, P. P., Monemar, B., Paskova, T., Preble, E. A., Hanser, A. D., and Evans, K. R., Phys. Stat. Sol. (c) 6, S763 (2009).Google Scholar
Polyakov, A. Y., Lee, I.-H., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., and Pearton, S. J., J. Appl. Phys. 109, 123701 (2011).CrossRefGoogle Scholar
Freitas, J. A. Jr., Mastro, M. A., Glaser, E. R., Garces, N. Y., Lee, S. K., Chung, J. H., Oh, D. K., and Shim, K. B., J. Crystal Growth 350, 27 (2012).CrossRefGoogle Scholar
Garces, N. Y., Feigelson, B. N., Freitas, J. A. Jr., Kim, J., Myers-Ward, R., and Glaser, E. R., J. Crystal Growth 312, 2558 (2010).CrossRefGoogle Scholar
Reshchikov, M. A., Demchenko, D. O., Usikov, A., Helava, H., and Makarov, Yu., Carbon defects as sources of the yellow and green luminescence bands in GaN grown by HVPE, Phys. Rev. B, in press (2014).CrossRefGoogle Scholar
Demchenko, D. O., Diallo, I. C., and Reshchikov, M. A., Phys. Rev. Lett. 110, 087404, 1–5 (2013).CrossRefGoogle Scholar
Monemar, B., Paskov, P. P., Tuomisto, F., Saarinen, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., and Kimura, S., Physica B 376–377, 440 (2006).CrossRefGoogle Scholar
Reshchikov, M. A., Appl. Phys. Lett. 88, 202104 (2006).CrossRefGoogle Scholar
Reshchikov, M. A., Foussekis, M. A., McNamara, J. D., Behrends, A., Bakin, A., and A.Waag, Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Zn and Si, J. Appl. Phys. 111, 073106, 1–12 (2012).CrossRefGoogle Scholar
Reshchikov, M. A., Kvasov, A., McMullen, T., Bishop, M. F., Usikov, A., Soukhoveev, V., and Dmitriev, V. A., Phys. Rev. B 84, 075212 (2011).CrossRefGoogle Scholar
Reshchikov, M. A., Foussekis, M. A., McNamara, J. D., Behrends, A., Bakin, A., and Waag, A., J. Appl. Phys. 111, 073106 (2012).CrossRefGoogle Scholar
Reshchikov, M. A., J. Appl. Phys. 115, 103503 (2014).CrossRefGoogle Scholar
Reshchikov, M. A., “Internal Quantum Efficiency of Photoluminescence in Wide-Bandgap Semiconductors”, Chapter in Photoluminescence: Applications, Types and Efficacy, Ed. Case, M. A. and Stout, B. C., Nova Science Publishers, Inc., New York, pp. 53–120, 2012, ISBN: 978-1-61942-426-5.Google Scholar
Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 71, 2572 (1997).CrossRefGoogle Scholar