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HVPE-based orientation-patterned GaAs: added-value for non-linear applications.

Published online by Cambridge University Press:  01 February 2011

Faye D. ,
Lallier E. ,
Grisard A. ,
Gérard B.  and
Gil-Lafon E.
Faye D.
Affiliation:
THALES RESEARCH & TECHNOLOGY (TRT), Domaine de Corbeville, 91404 Orsay, FRANCE.
Lallier E.
Affiliation:
THALES RESEARCH & TECHNOLOGY (TRT), Domaine de Corbeville, 91404 Orsay, FRANCE.
Grisard A.
Affiliation:
THALES RESEARCH & TECHNOLOGY (TRT), Domaine de Corbeville, 91404 Orsay, FRANCE.
Gérard B.
Affiliation:
THALES RESEARCH & TECHNOLOGY (TRT), Domaine de Corbeville, 91404 Orsay, FRANCE.
Gil-Lafon E.
Affiliation:
LASMEA UMR CNRS 6602, Campus Universitaire des Cézeaux, 63177 Aubière, FRANCE.
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Abstract

A new route is presented for the development of Orientation-Patterned Gallium Arsenide (OP-GaAs) for both guided and non-guided optical applications. The method is based on the use of the near-equilibrium growth process HVPE (Hydride Vapour Phase Epitaxy) that enables thick, high quality and orientation-preserving regrowth over dimensions fully compatible with targeted applications. The control of the growth anisotropy permits to preserve the original periodic arrangement of the initial template so that OP-GaAs substrates can be fabricated with pattern width and structure thickness ranging respectively from 1.8 to 110μm and 20 to 500μm. Such a large scope of dimensions appears useful either for bulk structures such as Optical Parametric Oscillators (OPO) or telecommunication applications. As an example, we suggest that combining this growth method with mechano-chemical polishing process could decrease propagation losses on AlGaAs waveguide structures for frequency conversion in telecom bands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z2.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1]: Bravetti, P., Fiore, A., Berger, V., Rosencher, E., Nagle, T., Gauthier-Lafaye, O., Opt.Lett. 23, 331 (1998).Google Scholar
[2]: Fiore, A., Janz, S., Delobel, L., Van Der Meer, P., Bravetti, P., Berger, V., Rosencher, E., Nagle, J., Appl. Phys. Lett. 72, 2942 (1998).Google Scholar
[3]: Becouarn, L., Gérard, B., Brévignon, M., Lehoux, J., Gourdel, Y. and Lallier, E., Elec. Lett. 34, 2409 (1998).Google Scholar
[4]: Yoo, S.J., Bhat, R., Caneau, C. and Koza, M.A., Appl. Phys. Lett. 66, 3410 (1995).Google Scholar
[5]: Yoo, S.J., Bhat, R., Caneau, C., Koza, M.A., Rajhel, A. and Antoniades, Neo, Appl. Phys. Lett. 68, 2609 (1996).Google Scholar
[6]: Ebert, C.B., Eyres, L.A., Fejer, M.M. and Harris, J.S. Jr, J. Crystal Growth 201, 187 (1999).Google Scholar
[7]: Eyres, L.A., Tourreau, P.J., Pinguet, T.J., Ebert, C.B., Harris, J.S., Fejer, M.M., Becouarn, L., Gérard, B. and Lallier, E., Appl. Phys. Lett. 79, 904 (2001).Google Scholar
[8]: Gil-Lafon, E., Napierala, J., Castelluci, D., Pimpinelli, A., Cadoret, R. and Gérard, B., J. Crystal Growth 222, 482 (2001).Google Scholar